Chief Scientist & Head,
Polymorphic Carbon Thin Films Group
Physics of Energy Harvesting Division
CSIR-NPL, New Delhi India
Polymorphic Carbon Thin Films Group
Physics of Energy Harvesting Division
CSIR-NPL, New Delhi India
O S Panwar
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Address (a) Official: Polymorphic Carbon Thin Films Group (D1.02) Physics of Energy Harvesting Division CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg, New Delhi-110012
(b) Residential: DG2/285 D, Vikaspuri, New Delhi-110018. © E-mail: [email protected], [email protected]
© Areas of Research: Amorphous/ Microcrystalline Silicon and Carbon Based Materials, Devices and Systems, Chalcogenide Glasses and Synthesis of Graphene
Educational Qualifications________________________________________________________________________________
Examination/ University/ Year Div./ Subject/RemarksDegree Board % Marks ________________________________________________________________________________ High School U.P. Board 1969 Ist/70.0 Hindi, Eng, Maths, Sc& Bio Intermediate U.P. Board 1971 Ist/67.8 Hindi, Eng, Math, Phys& Chem B.Sc. Hons. Meerut Univ. 1973 Ist/75.4 Phys, Maths & Stat. M.Sc. Meerut Univ. 1975 Ist/69.8 PHYSICS/IInd PositionCertificate in German Panjab Univ. 1977 Ist/80.0 German languagePh.D. Panjab Univ. 1980 Electrical Properties of pure
and doped glasses of As-Ge-Te________________________________________________________________________________
Field of Specialization:
1. Solid State Physics, Experimental (Amorphous Semiconductors)2. Optoelectronic Materials and Devices (Solar Cells, TFTs and Field Emission Devices)3. Thin Films and Vacuum Technology4. Micro/Nano Silicon and Nanocarbon thin films and graphene
Professional Experience1. Scientist G (Now Chief Scientist) from Feb 2009 to date and Head, Plasma Processed Materials Group from Oct., 2007 to May 29, 2012 (The name of the group got changed to Amorphous and Microcrystalline Silicon Solar Cells Group since 2010 upto 29 th May 2012), Head Polymorphic Carbon Thin Films Groupin Physics of Energy Harvesting from May 29, 2012 onwards, Scientist F from Feb.2004 to Jan. 2009, Scientist EII from Feb. 1998 to Jan.2004, Scientist E I from Feb. 1993 to Jan. 1998, Scientist C from Feb. 1988 to Jan., 1993, Scientist B from Feb. 1983 to Jan. 1988, at National Physical Laboratory, New Delhi-110012.2. Raman Research Fellow from May 2001 to July 2001 at Engineering Department, Cambridge University, Cambridge CB2 1PZ, England. 3. Research Fellow from Oct. 1987 to June 1988 at Microelectronics and Electrical Engineering, Trinity College, Dublin-2 (Ireland) and Honorary Research Fellow from May-June 1988 at the Department of Electrical and Electronic Engineering, The Queen's University of Belfast, Belfast-9 (U.K.) 4. Research Associate from Jan. 1981 to Jan. 1982 and Senior Scientific Officer from Jan. 1982 to Jan. 1983 at Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016. 5. JRF and SRF from Jan. 1976 to Jan. 1980 and PDF from Jan. 1980 to Jan. 1981 at Physics Department, Panjab University, Chandigarh-160014.
Scholarship1. National Scholarship from July 1973 to June 1975. 2. Bursary Scholarship from July 1971 to June 1973. 3. Merit Scholarship from July 1969 to June 1971.
Honors:A. Academic achievements(i) Topper in the Certificate Course in German in 1977.(ii) Topper in M. Sc. (in the college) and 2nd position in the University in 1975.(iii) Topper in B.Sc. (in the college) and 14th position in the University in 1973.(iv) Topper in 12th class & also of Centre (consisting of four college) (in U.P.board exam) in 1971. (v) Topper in 10th class (in the school) (in U.P. board exam) in 1969.
B. National Cadet Corps, Certificate B, Feb., 1972 (UPSD/71/266943, 45 UP Batalian NCC, R. K. Degree College, Shamli, M. Nagar, U.P.)(Ministry of Defense Govt. of India)
C. Best Student of Faculty of Science (1974-75) in R. K. Degree College Shamli, Muzaffarnagar (U.P.). D. My `Biographical sketch' has been included in the following on the basis of research:1. Several Nominations in various titles by American Biographical Institute Inc., North Carolina (USA) and International Biography Center, Cambridge CB2 3QP, ENGLAND.2. Best Citizens of India in the book entitled “ Honored best citizens of India” published from New Delhi, 2000.3. International Man of the Year 2000 – 2001 in Dictionary of International Biography, published from International Biography Center, Cambridge CB2 3QP ENGLAND.4.Dictionary of International Biography, 26 (l998), 27 (1999) and 28 (2000), published from International Biography Center, Cambridge CB2 3QP ENGLAND. 5. Marquis Who's Who in Science and Engineering 4 (1998), published from 121 Chanlon Road, New Providence, N.J. 07974 (USA). 6. Marquis Who's Who in the World 14 (1997) ll06, 18(2000), 31(2013 published from 121 Chanlon Road, New Providence, N.J. 07974 (USA).
Award:1. Bharat Jyoti Award for the year 2013 (to be given) 2. MRSI Medal award for the year 2011. 3. Raman Research Fellowship for the year 2001
Best Poster Paper Award:1. The poster paper entitled “Field Emission From Diamond Like Carbon Films Grown By RF PECVD Technique by Using Various Hydrocarbons” by O. S. Panwar, Sushil Kumar, S. S. Rajput, Rajnish Sharma & R.Bhattacharyya, presented in 10th Int. Workshop on “Physics of Semiconductor Devices” held at I.I.T. Delhi from Dec. 14 – 18, 1999 has been adjudged the best poster paper. IEEE (India) and MTT chapter has also given a cash prize of Rs 1000/-.2. The poster paper entitled "Photothermal Deflection Spectroscopy and Space Charge Limited Conduction Studies in Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source’’ by D. Sarangi, O. S. Panwar and R. Bhattacharyya, presented in 9th Int. Workshop on `Physics of Semiconductor Devices,' held at Jamia Millia Islamia, Jamia Nagar, New Delhi from Dec. 16-20, 1997 has been adjudged the best poster paper on 17th December 1997.
Invited talks1. “Photothermal Deflection Spectroscopy (PDS),A Tool to Study Optical Absorption in Silicon and Polymer Multilayered Thin Films for Solar Cell Applications” by Sreekumar Chockalingam and O. S. Panwar, Invited Talk (IL-40) in “ 3rd Int. Multicomponent Polymer Conference (IMPC)”, held at Institute of Macromolecular Science and Engineering (IMSE), Kottayam, Kerala (India) from March 23-25, 2012, p. 372. “Tetrahedral Amorphous Carbon and Amorphous Carbon Films with Embedded Nanoparticles Deposited by Filtered Cathodic Vacuum Arc Technique” by O. S. Panwar, MRSI Medal Lecture in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal (M.P.) from Feb.14-16, 2011. 3. “Novel Filtered Cathodic Vacuum Arc Technique for the Deposition of Tetrahedral Amorphous Carbon Films” by O. S. Panwar, Invited Inaugural lecture as Chief Guest in the Annual function of the Department of Chemistry, Daulat Ram College, University of Delhi, Delhi, 7th Dec. 2009.4. "Different Approaches to Realize Stress Relieved Films of Diamond- Like Carbon" by Sushil Kumar, D. Sarangi, P.N. Dixit, O. S. Panwar, C. Anandan and R. Bhattacharyya, Invited talk in National Conference on `Science and Technology of Surfaces and Interfaces' held at I. I. T. Kharagpur from Dec., 16-18, 1996. 5. "Polysilicon TFTs Manufactured From Material Recrystallised at Low-Temperature" by B.M. Armstrong, H.S. Gamble, N.S.J. Mitchell, O. S. Panwar and R.A. Moore, Invited Oral paper in Workshop on `Polysilicon Thin-Film Transistors and Related Material Aspects for Large Area Microelectonics' , Cambridge (U.K.) 1989.6. "Growth of Hydrogenated Amorphous Silicon Films In Cascaded Glow Discharge Reactors Systems - A Review" by P.N. Dixit, O. S. Panwar, R. Bhattacharyya and V.V. Shah, Invited talk in V Nat. Seminar on `Physics of Semiconductors and Devices', held at Dept. of Physics and Electronics Engineering, B.H.U. Varanasi from Dec.5-7, 1985.
Teaching Experience: 2 years (One year demonstration to Engineering undergraduates at Trinity College, Dublin-2, Ireland in in 1987-88 and one year demonstration in M. Sc. Hons lab at Panjab University, Chandigarh in 1975).
Membership of Professional Societies1. Materials Research Society of India-Life member2. Semiconductor Society of India- Life member3. Solar Energy Society of India- Life member4. Society of Scientific Values (Ethics in Scientific Research, Development & Management)-Nominated Member5. American Nano Society- Nominated Member Worked or Working as: 1. External member of “Research Council (RC) of R&D Centre at Central Electronic Limited (CEL), Sahibabad, (U.P.)” from 1st July 2012 to 31st March 2015.2. Acted as Core member in the Assessment Committee of Scientists Group IV (4) in RAB of CSIR. In 2011. 3. Chairman, Project Advisory Committee (PAC) of Department of Science and Technology (Govt of India) to The Energy Research Institute (TERI), New Delhi since Dec., 2010.4. Member of Board of Studies in Physics at Harcourt Butler Technological Institute (H.B.T.I.), Kanpur (U.P) from 2009 -2011.5. Member of Board in setting CSIR/UGC NET paper and evaluating answer sheets since 2005-2011.6. Referee in several International journals (Diamond Relat. Mater., SOLMAT, Vacuum, Appl. Surf. Sci, Mater. Chem. Phys., ICMCTF, Crystal Research Technol., Surf. Sci. Coat. Thin Solid Films, Mater. Res. Bull.)
Ph.D. produced: One (Mohd. Alim Khan)Title: “Study of pure and doped tetrahedral amorphous semiconductor deposited by a novel filtered cathodic vacuum arc technique “ (Jamia Millia Islamia, New Delhi (Central University) Nov. 2005 (Awarded in July 2006).
M. Phil. dissertation: One (Raju)
Title: “Deposition and characterization of amorphous carbon film by modified vacuum arc technique” (Bundelkhand University, Jhansi, Sept., 2008)
M. Tech. dissertation: ONE (Ankur Gupta)
(i) Title: “A novel filtered vacuum arc technique for the deposition of thin films” (Amity Institute of Nanotechnology, Amity University, Noida, UP, July 2009). (ii)Title: “ Field Emission from amorphous Carbon Thin Film Having Embedded nanaoparticles” ( Delhi Technological University, Formerly Delhi College of Engineering, Dhahbad, Delhi-110042, July 2011). (Prabhakar Singh)
Supervising (i) Mr. R. K. Tripathi for Ph.D. w.e.f. 19th June, 2011 ( JRF- MNRE). He was working as PA w.e.f. 23 Nov. 2009. (ii) Mr. Ajay Kesarvani for Ph.D. w.e.f. 19th July, 2010 ( SRF, CSIR).(iii) Mr. Atul Bisht for Ph.D. w.e.f. from 20th July, 2010(SRF, UGC)(iv) Mr Kamlesh Patel, Sc C trying for the registration for Ph.D. Research Publications: List attached [181 papers (59 in SCI Int. Journals, 9 in SCI Nat. journal, 8 in Non SCI Nat. journal, 41 in edited books, 23 in Int. Conf., 33 in Nat. Conf., 6 Invited talks, 2 Best poster paper)], one patent, l1 N.P.L. research report and 2 in NPL Samiksha in Hindi (Total =195)Total available citations ~ 486 on 26-2-2013 and “h index” factor = 11 (ELEVEN) Past Occupation1. Preparation, characterization and measurement of pure and doped chalcogenide glasses.2. Photocontraction effects in chalcogenide thin films.3. Amorphous silicon films prepared by RF magnetron sputtering technique.4. Low-temperature crystallization of LPCVD and APCVD amorphous silicon films to produce large grain size and fabrication of high performance Thin Film Transistors (TFTs).5. Preparation, characterization and measurement of stress relieved hydrogenated amorphous carbon (diamond like carbon) films by R.F. self bias, VHF PECVD, Pulsed PECVD, Saddle field fast atom beam (FAB) source, microwave and other techniques.6. Research and development work related to the materials and devices of hydrogenated amorphous silicon and its alloys like a-SiGe: H and a-SiC: H for solar cells and fully integrated panels and other devices.7. Hydrogenated amorphous silicon films grown at high rate (18 Aº/sec)for X-ray and neutron detectors, optically addressed spatial light modulators (OASLM), Xerography etc.8. Field emission in carbon based thin films.9. Exploration of Plasmonics in amorphous/microcrystalline silicon solar cells 10 Hydrogenated amorphous silicon films grown at high rates at VHF and Amorphous and microcrystalline thin film silicon solar cells.
Present occupation: 1. Synthesis of high quality graphene by filtered cathodic vacuum arc (FCVA) and microwave PECVD techniques and its characterization and utilization in solar cells as transparent conductor, fuel cells, lithium ion batteries, super capacitors and sensors etc.2. Amorphous carbon thin films having nanoparticle inclusions by the modified cathodic arc based techniques like cathodic jet carbon arc (CJCA) and anodic jet carbon arc (AJCA) techniques.3. Preparation, characterization and measurements of undoped and doped tetrahedral amorphous carbon( ta-C ) films deposited by filtered cathodic vacuum arc (FCVA) technique 4. Field-emission in DLC/ta-C / a-C films having embedded nanoparticles and in nanoclustered, nanocomposite, nano tubes. 5. Metal and silicon incorporated diamond like carbon films having reduced stress for automobile parts.6. Undoped and doped amorphous/microcrystalline silicon films and alloys deposited by FCVA technique without the use of toxic and hazardous gases like SIH4, PH3, B2H6 for solar cells .7. R & D on Thin Film Solar Cell (a-Si, CIGS / CdTe) and HIT solar cells.
Participated in the Project completed / ongoing
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Investigations on hydrogenated
amorphous
Silicon films for solar cells
and integrated
Panels (Ist phase)
Investigations on hydrogenated amorphous
Silicon films for solar cells
and integrated
panels (2nd phase)
Design and fabrication of large
area multi
chamber PECVD reactor for
a-Si:H
applications ( in collaboration
with ASSPP & BHEL Gwalphari) (3rd phase)
Design and fabrication of
plasma CVD based
system for deposition of
diamond like carbon
(DLC) films on germanium substrates
Development of a
semiconduncting processing
equipment (Multizone PECVD
Based ) system
for CEERI
Investigations aimed at
producing stress relieved
diamond like carbon films (a-C
and a-C: H) of
high IR transmission/high photoconductivity
and luminous efficiency
Thick P-I-N hydrogenated
amorphous silicon
Layers for OASLM and Radiation
detectors
(in collaboration with Display
group of NPL and
I.I.T. Kanpur)
High performance Me-DLC
coatings by reactive
DC magnetron sputtering
Tetrahedral
amorphous carbon (ta-C) films
deposited
by filtered vacuum arc discharge
(FVAD)
technique
Plasma
assisted deposition of hydrogenated
silicon
films at high rates at VHF frequencies
(CW
and pulsed)
High
rate deposition of microcrystalline silicon
films
using microwave plasma and its
application
to efficient large area thin film solar
cells
Amorphous
carbon thin films having
nanoparticle
inclusions deposited by the
modified
vacuum plasma arc based techniques
Supra Institutional project on
R&D on
Photovoltaic and other Energy
Applications
Technology for Assessment and
Refurbishment
of Engineering Materials and
Components
R & D on Thin Film Solar
Cell (a-Si, CIGS)
Synthesis of high quality
graphene and its ionDe applications
Member
Member
Member
Member
Member
Co-PI
Member
P.I.
P.I
Member
Member
PI
Member
Member
Member
Co-PI
DNES
/MNES
DNES/
MNES
MNES
IRDE
CEERI,
Pilani
DST
DST+
BRNS+
IRDE
NPL
DST
DST
DST
DST
CSIR
CSIR
Network
MNRE
DRDO
37.6
27.0
45.7
23.587
2.5
23.303
13.0
2.0
28.198
38.63
(60.53)
38.867
(59.57)
34.945
1500
(70 for
thin film cell)
~53
4906.6
1457.05
1-10-84
1-11-88
29-9-91
9-4-91
1-1-93
21-1-97
1-4-02
1-6-99
29-9-99
8-11-02
25-1-06
16-1-08
1-4-07
22-2-08
15-6-11
(Project
submitted
on
26-7-12
30-9-87
31-10-91
28-9-94
8-8-93
30-6-95
20-1-01
31-3-07
31-5-01
28-12-03
7-11-06
24-1-10
15-7-11
31-3-12
31-3-12
14-6-15
List of Publications of Dr. O .S. PANWAR (with citation index and Impact factor)
(A) Papers in International Journals1. “Investigation of microstructural and nano-mechanical properties of nanostructured diamond like carbon thin films” by Saurabh Dayal, Sushil Kumar, Neeraj Dwivedi, Sreekumar Chockalingam, C. M. S. Rauthan, O. S. Panwar, Metals and Materials International (In Press 2013) (Impact factor =1.183). 2. “Effect of Metallic Interfacial Layers on the Properties of Diamond-Like Carbon Thin Film” by Neeraj Dwivedi, Sushil Kumar, Sreekumar C, Saurabh Dayal, C. M. S. Rauthan, O. S. Panwar, Metals and Materials International 2(2012) 231-236 (Impact factor = 1.183).3. ”Effect of substrate bias in hydrogenated amorphous carbon films having embedded nanocrystallites deposited by cathodic jet carbon arc technique” by O. S. Panwar, Ishpal, R. K. Tripathi, A. K. Srivastava, Mahesh Kumar, Sushil Kumar, Diamond Relat. Mater. 25 (2012) 63-72.(Impact factor=1.913) ( doi:10.1016/j. diamond.2012.02.010).4. “Effect of Substrate Bias in Nitrogen Incorporated Amorphous Carbon Films with Embedded Nanoparticles Deposited by Filtered Cathodic Jet Carbon Arc Technique ” by O. S. Panwar, Sushil Kumar, Ishpal, A. K. Srivastava, Abhilasha Chouksey, R. K. Tripathi, A. Basu, Mater. Chem. Phys. 132(2-3)(2012)659-666.(Impact factor = 2.234).(Times Cited =ONE).5. “Investigation of Properties of Cu Containing DLC films produced by PECVD process” Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, Sreekumar C., Saurabh Dayal, C. M. S. Rauthan, O. S. Panwar, J. Phys. Chem. Solids 73(2) (2012) 308-16 (Impact factor = 1.632) (Times Cited =TWO).6. “Field emission, morphological and mechanical properties of variety of diamond- like carbon thin films”, Neeraj Dwivedi, Sushil Kumar, R. K. Tripathi, Hitendra K. Malik, O. S. Panwar, Appl. Phys. A: Materials Science and Processing 105(2) (2011) 417-425 (Impact factor = 1.630) (Times Cited =FOUR).7. “Influence of Bonding Environment on Nano-mechanical properties of nitrogen containing hydrogenated amorphous carbon thin films, Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, C. M. S. Rauthan and O. S. Panwar, Mater. Chem. Phys. 130(1-2) (2011) 775-785 (Impact factor = 2.234) (Times Cited=THREE) (doi:10.1016/j.matchemphys.2011.07.060).8. “Effect of Substrate bias in Amorphous Carbon Films Having Embedded Nanocrystallites ” by Ishpal, O. S. Panwar, A. K. Srivastava, Sushil Kumar, R. K. Tripathi, Mahesh Kumar, Sandeep Singh, Surf. Coat. Technol 206 (2011)155-164. (Impact factor = 1.867) (Times Cited =ONE).9. “Correlation of sp3 and sp2 Fraction of Carbon with Electrical, Optical and Nano-mechanical Properties of Argon-diluted Diamond-Like Carbon Films ” by Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, Govind, C. M. S. Rauthan, O. S. Panwar, Appl. Surf Sci. 257(15) (2011) 6804-6810 (Impact factor = 2.103). (Times Cited =ELEVEN) (doi:10.1016/j.apsusc.2011.02.134).10. “Determination of Density-of-States of Nanocluster Carbon Thin Films MIS Structure Using Capacitance- Voltage Technique” by Shounak De, Jhuma Gope, B. S. Satyanaryana, O. S. Panwar, Mohan Rao, Modern Physics Letters B 25 (2011) 763-772 (Impact factor = 0.474) (Times Cited =ONE).11. “Role of Metallic Ni-Cr Dots on the Adhesion, Electrical, Optical and Mechanical Properties of Diamond- Like Carbon Thin Films” by Neeraj Dwivedi, Sushil Kumar , C.M.S. Rauthan, O. S. Panwar, Plasma Processes and Polymers 8(2) (2011) 100-107 (Impact factor = 2.468) (Times Cited=FIFTEEN).12. “Nano Indenentation Measurements on Nitrogen Incorporated Diamond-Like Carbon Coatings” by Neeraj Dwivedi, Sushil Kumar, C. M. S. Rauthan, O. S. Panwar, Appl. Phys. A 102(1) (2011) 225-230 (Impact factor = 1.630) (Times Cited=FOURTEEN).13. “Effect of Ambient Gaseous Environment on the Properties of Amorphous Carbon Thin Films” by Ishpal, O. S. Panwar, Mahesh Kumar, Sushil Kumar, Mater. Chem. Phys.125 (2011) 558-567 (Impact factor = 2.234) (Times Cited = FOUR).14. “Studies of Nanostructured Copper/Hydrogenated Amorphous Carbon Multilayer Films” by Neeraj Dwivedi, Sushil Kumar, Ishpal, Saurabh Dayal, Govind, C.M.S. Rauthan, O. S. Panwar, J. Alloys and Compounds 509(4) (2011)1285-1293 (Impact Factor = 2.289) (Times Cited=FOURTEEN).15. "Role of Sandwich Cu Layer and Effect of Self Bias on Nano-mechanical Properties of Copper/Diamond-Like Carbon Bilayer Films," by Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, C. M. S. Rauthan and O. S. Panwar, ISRN Nanotechnology 2011 (2011) 846187/1-7 pages. (Impact factor = --) (Times Cited = TWO).16. “Studies of Nanostructured Copper/Hydrogenated Amorphous Carbon Multilayer Grown in Low Base Vacuum System” by Neeraj Dwivedi, Sushil Kumar, Ishpal, Saurabh Dayal, Govind, C.M.S. Rauthan, O. S. Panwar, J. Alloys and Compounds 509 (2011)1285-1293 (Impact Factor = 2.289) (Times Cited =FOURTEEN).17. “Effect of High substrate Bias and Hydrogen and Nitrogen Incorporation on the Spectroscopic Ellipsometric and Atomic Force Microscopic studies of Tetrahedral Amorphous Carbon films” by O. S. Panwar, Mohd Alim Khan, Satyendra Kumar, A. Basu, B. R. Mehta, Sushil Kumar, Ishpal, Surf. Coat. Technol. 205 (2010) 2126-2133 (Impact Factor = 1.867) (Times Cited =SEVEN).18. “X-ray photoelectron spectroscopy of Nitrogen Incorporated Amorphous Carbon Films Embedded with Nano particles Deposited Using Filtered Cathodic Jet Carbon Arc Technique” by Ishpal, O. S. Panwar, Mahesh Kumar , Sushil Kumar, Appl. Surf. Sci. 256 (2010) 7371-7376 (Impact factor = 2.103) (Times Cited =THREE).19. “Mechanical Properties of Nanostructured Copper/Hydrogenated Amorphous carbon Multilayer Films Grown in a Low base vacuum System” by Neeraj Dwivedi, Sushil Kumar, Davinder Kaur, C. M. S. Rauthan and O. S. Panwar, Optoelectronics and Advanced Materials- Rapid Communication 4 (2010) 604-609 (Impact factor = 0.457) (Times Cited =ONE).20. “Effect of High substrate Bias and Hydrogen and Nitrogen Incorporation on Density of States and Emission threshold in Tetrahedral Amorphous Carbon films” by O. S. Panwar, Mohd Alim Khan, R. Bhattacharyya, B. R. Mehta, Sushil Kumar and Ishpal, B.S. Satyanarayana, J. Vac. Sci. Technol. B 28 (2010) 411-422 (Impact factor = 1.341) (Times Cited =FIVE).21. “Properties of Boron and Phosphorous Incorporated Tetrahedral amorphous Carbon Films Grown Using Filtered cathodic vacuum Arc process” by O. S. Panwar, Mohd. Alim Khan, B. S. Satyanarayana, Sushil Kumar, Ishpal, Appl. Surf. Sci. 256 (2010) 4383-4390 (Impact factor = 2.103) (Times Cited =FOUR).22. “Properties of Nitrogen Diluted Hydrogenated Amorphous Carbon (n-type a-C: H) Films and their Characterization in n-type a-C: H /p-type Crystalline Silicon Heterojunctions Diodes” by Sushil Kumar, Neeraj Dwivedi, C.M.S. Rauthan and O. S. Panwar, Vacuum 84(2010) 882-889 (Impact factor= 1.317) (Times Cited =THIRTEEN).23. “Amorphous and Nanocrystalline Silicon Made by Varying Deposition Pressure in PECVD Process” by Jhuma Gope, Sushil Kumar, A. Parashar, P.N. Dixit, C.M.S. Rauthan, O. S. Panwar, D.N. Patel and S.C. Agarwal, J. Non- Cryst. Solids 355 (2009) 2228-2232 (Impact factor= 1.537) (Times Cited =THREE).24. “Photoluminescence and electrical conductivity of silicon containing multilayer structures of diamond like carbon” by Neeraj Dwivedi, Sushil Kumar, C.M.S. Rauthan, O. S. Panwar and P.K. Siwach, J. Opto electronics and Advanced Materials 11(2009)1618-1626 (Impact factor = 0.457) (Times Cited =TWO)25. “Characterization of Boron and Phosphorous Incorporated Tetrahedral Amorphous Carbon Films Depositedby the Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, Mahesh Kumar, S.M.Shivaprasad, B.S. Satyanarayana, P.N. Dixit and R. Bhattacharyya, Jap. J. Appl. Phys. 48(6) (2009) 65501-65508. (Impact factor=1.058) (Times Cited = THREE).26. “Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon / silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique” by O. S. Panwar, Nalin Rupesinghe and G.A.J. Amaratunga, J. Vac. Sci. Technol. B 26 (2008) 566-575 (Impact factor=1.341) (Times Cited = FOUR).27. “Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc deposited tetrahedral amorphous carbon films” by O. S. Panwar, Mohd. Alim Khan, Mahesh Kumar, S.M. Shivaprasad, B.S. Satyanarayana, P.N. Dixit, R. Bhattacharyya and M. Y. Khan, Thin Solid Films 516 (2008)2331-2340 (Impact factor=1.89) (Times Cited= SIXTEEN).28. “ Reflectance and Photoluminescence Study of As grown and Hydrogen and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited Using an S Bend Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, B. Bhattacharjee, A. K. Pal, B.S. Satyanarayana, P.N. Dixit, R. Bhattacharyya and M.Y. Khan, Thin Solid Films 515(2006)1597-1606 (Impact factor = 1.89) (Times Cited= SEVEN).29. “Characterization of As grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Pulsed Unfiltered Cathodic Vacuum Arc Process” by O. S. Panwar, B. Deb, B.S. Satyanarayana, Mohd. Alim Khan, R. Bhattacharyya and A.K. Pal, Thin Solid Films 472 (2005) 180-188 (Impact factor=1.89) (Times Cited= TEN).30. “Space Charge Limited Conduction and Electron Paramagnetic Resonance Studies of As grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Pulsed Unfiltered Cathodic Vacuum Arc Process” by O. S. Panwar, S. K. Gupta, Mohd. Alim Khan, B. S. Satyanarayana and R. Bhattacharyya, Diamond Rel. Mater. 13(2004) 513-520 (Impact factor = 1.913) (Times Cited=FOUR).31. “XPS and XAES Studies of As grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Pulsed Unfiltered Cathodic Vacuum Arc Process” by O. S. Panwar, Y. Aparna, S.M. Shivaprasad, Mohd. Alim Khan, B.S. Satyanarayana and R. Bhattacharyya, Appl. Surf . Sci. 221 (2004) 392- 401. (Impact factor=2.103) (Times Cited= TEN).32 “Dependence of Field Emission Threshold in Diamond Like Carbon Films Grown by Various Techniques” by O. S. Panwar, Sushil Kumar, S.S. Rajput, Rajnish Sharma and R.Bhattacharyya, Vacuum 72 (2004) 183-192 (Impact factor=1.317) (Times Cited= TWELVE).33. “Effect of Substrate Bias on SE, XPS and XAES Studies of Diamond Like Carbon Films Deposited by Saddle Field Fast Atom Beam Source” by Rajnish Sharma, O. S. Panwar, Sushil Kumar, D. Sarangi, A. Goullet, P.N. Dixit and R. Bhattacharyya, Appl. Surf. Sci. 220 (2003)313- 320 (Impact factor=2.103) (Times Cited= FIVE).34. "Electron Field Emission from Diamond Like Carbon Films Grown by a Saddle Field Fast Atom Beam Source" by O. S. Panwar, Rajnish Sharma, Sushil Kumar and P. N. Dixit, J. Vac. Sci. Technol. B 21 (2003) 1986-1995 (Impact factor=1.341) (Times Cited=SEVEN).35. “Correlation of Residual Stress with Optical Absorption Edge in Diamond Like Carbon Films by Sushil Kumar, P.N.Dixit, O. S. Panwar and R. Bhattacharyya, Diamond Relat. Mater. 12 (2003) 1576-1583. (Impact factor=1.915) (Times Cited= ELEVEN).36. “Characterization of Saddle Field Fast Atom Beam Source and its Application to the Growth of Diamond Like Carbon Films” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya, Vacuum 58 (2000) 609-627 (Impact factor=1.317) (Times Cited= EIGHT).37. “Characterization Studies of Diamond Like Carbon Films Grown Using Saddle Field Fast Atom beam Source” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya , J. Vac. Sci. Technol. A 18(2000) 2302-2311 (Impact factor=1.253) (Times Cited=ELEVEN).38. “Effect of Annealing on the Electrical, Optical and Structural properties of Hydrogenated Amorphous Silicon Films Deposited in an Asymmetric R.F. Plasma CVD System at Room Temperature" by O. S. Panwar, C. Mukherjee and R. Bhattacharyya, Solar Energy Materials and Solar Cells 57(1999) 373-391(Impact factor=4.542) (Times Cited=ELEVEN).39. "Diamond-Like Carbon films with Extremely Low Stress” by Sushil Kumar, D Sarangi, P.N. Dixit, O. S. Panwar and R. Bhattacharyya, Thin Solid Films 346 (1999) 130-137 (Impact factor=1.890) (Times Cited=SIXTEEN).40. "Enhanced Fast Atom Beam Deposition Grows DLC", D. Sarangi, O. S. Panwar, Sushil Kumar, P.N. Dixit and R. Bhattacharyya, Advanced Coatings and Surface Technology Alert, July 24,1998 (John Wiley and Sons, Inc., New York 10158).41. "Filtered Saddle Field Fast Atom Beam Deposition of Diamond Like Carbon Films" by D. Sarangi, O. S. Panwar, Sushil Kumar, P.N.Dixit and R. Bhattacharyya, J. Vac. Sci. Technol. A 16 (l998) 203-206. (Impact factor=1.253) (Times Cited=ELEVEN).42. "Diamond Like Carbon Films Formed by a Filtered Saddle Field Fast Atom Beam Source" by D. Sarangi, O. S. Panwar, Sushil Kumar, P.N. Dixit and R. Bhattacharyya, Surface and Coatings Technol.94-95(1997) 356-361 (Impact factor=1.867) (Times Cited= SIX).43. “Diamond Like Carbon Films Grown Using a Saddle Field Fast Atom Beam Source" by O. S. Panwar, D. Sarangi, Sushil Kumar, P.N. Dixit and R. Bhattacharyya, J. Vac. Sci. Technol. A 13 (1995) 2519-2524. (Impact factor=1.253) (Times Cited=NINETEEN).44. "Investigations on Hydrogenated Amorphous Silicon Films Grown at High Rate in a UHV CVD System" by P.N. Dixit, O. S. Panwar, B.S. Satyanarayana and R. Bhattacharyya, Solar Energy Materials and Solar Cells 37 (1995) 143-157 (Impact factor=4.542) (Times Cited=THREE).45. "Infrared Studies of Hydrogenated Amorphous Carbon (a-C: H) Film and the Effect of Argon Plasma Treatment" by P.N.Dixit, S.P. Verma, O. S. Panwar, Tanay Seth, D. Gupta and R. Bhattacharyya, Infrared Phys. Technol. 35 (1994) 617-624 (Impact factor=1.296) (Times Cited = TEN).46. "Comparative Study of Large Grains and High Performance TFTs in Low- Temperature Crystallized LPCVD and APCVD Amorphous Silicon Films" by O. S. Panwar, R.A. Moore, S.H. Raza, H.S. Gamble and B.M. Armstrong, Thin Solid Films 237 (1994) 255- 267(Impact factor = 1.890) (Times Cited = SIX)47. “Effect of Power and Pressure on the Properties of Hydrogenated Amorphous Silicon Films Prepared by DC Glow Discharge" by Tanay Seth, P.N. Dixit, O. S. Panwar and R. Bhattacharyya, Solar Energy Materials and Solar Cells 31 (1993) 215-226(Impact factor=4.542) (Times Cited=FOUR).48. "Studies of Subgap Absorption and Related Parameters by Constant Photocurrent Method of High Rate Deposited Hydrogenated Amorphous Silicon Films' by Ajay Tyagi, O. S. Panwar, B. S. Satyanarayana, P.N. Dixit, Tanay Seth, R. Bhattacharyya and V.V. Shah, Thin Solid Films 203 (1991) 251-257 (Impact factor=1.890) (Times Cited=TWO).49. "Electrical Properties of Boron Doped Hydrogenated Amorphous Silicon Films Prepared By Glow Discharge Decomposition of Dilute Silane" by O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, B.S. Satyanarayana, R. Bhattacharyya and V.V. Shah, Thin Solid Films 176 (1989)79-90 (Impact factor=1.890).50. "Low -Temperature Crystallization of Amorphous Silicon Films for the Fabrication of Thin Film Transistors" by O. S. Panwar, R.A. Moore, N.S.J. Mitchell, H.S. Gamble and B.M. Armstrong, Appl. Surf. Sci. 36 (1989) 247-256 (Impact factor= 2.103) (Times Cited=EIGHT).51. "Hydrogenated Amorphous Silicon Films Prepared in Cascaded Glow Discharge Reactors" by O.S. Panwar, P.N. Dixit, R. Bhattacharyya and V.V. Shah, J. Appl. Phys. 59(1986)1578-1586(Impact factor =2.168) (Times Cited =FIVE).52 "Light Induced Conductivity Changes in a-Si: H Films Prepared in Cascaded Glow Discharge Reactors” by O.S. Panwar, P.N. Dixit, R. Bhattacharyya and V.V. Shah, Thin Solid Films 135(1986) 165-171 (Impact factor=1.89) (Times Cited =ONE).53. "Preparation and Properties of Hydrogenated Amorphous Silicon Films by Glow Discharge Decomposition of Silane in Cascade Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V.V. Shah, Appl. Phys. Lett. 4(1984) 991-993 (Impact factor=3.844) (Times Cited= SEVEN).54. "Photocontraction Effect in Pure Chalcogen and Alloy Films" by O. S. Panwar and K.L. Chopra, J. Non- Cryst. Solids, 51 (1982) 123-127 (Impact factor=1.537) (Times Cited =FOUR).55. "Electrical and Dielectric Properties of As10Ge15Te75Agx Glasses" by O. S. Panwar, M. Radhakrishna, K.K. Srivastava and K.N. Lakshminarayan, Phil. Mag. B 41 (1980) 253-271 (Impact factor=1.510) (Times Cited=NINE).56 "Electrical Properties of Silver Doped As10Ge15Te75 Glassy Alloy" by O. S. Panwar, M. Radhakrishna, K.K. Srivastava and K.N. Lakshminarayan, J. Non - Cryst. Solids, 33 (1979) 411-416. (Impact factor =1.537) (Times Cited=SEVEN).57. "Dielectric Relaxation Study of Chalcogenide Glasses" by K.K. Srivastava, A. Kumar, O. S. Panwar and K.N. Lakshminarayan, J. Non-Cryst. Solids 33 (1979) 205-224. (Impact factor=1.537) (Times Cited = SIXTY SIX).58. "Electrical Properties of Glassy Asx Ge10Te90-x Alloys" by O. S. Panwar, A. Kumar, D.R. Goyal, K.K. Srivastava and K.N.Lakshminarayan, J. Non-Cryst. Solids 30 (1978) 37-44 (Impact factor=1.537) (Times Cited= EIGHTEEN).59. "Dielectric Properties of Glassy As10Te75Ge15", by K.K. Srivastava, D.R. Goyal, A. Kumar, K.N. Lakshminarayan, O. S. Panwar and I. Krishan, Phys. Stat. Sol. A 41 (1977) 323-329 (Impact factor = 1.463) (Times Cited=TWENTY).
(B) Papers in National Journals1. “Analysis of Dielectric Constants to Determine sp3/sp2 Ratio and Effect of Substrate Bias on Spectroscopic ellipsometric Studies of Tetrahedral Amorphous Carbon films Grown Using an S bend Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, A. Basu, Satyendra Kumar and Sushil Kumar, Ind. J. Pure and Appl. Phys. 47 (2009)141-148 (Impact factor=0.763)(Times Cited =ONE)2. “Effect of hydrogen and nitrogen incorporation on the properties of tetrahedral amorphous carbon films grown using an S bend filtered cathodic vacuum arc process” by O. S. Panwar, Mohd. Alim Khan, G. Bhagavanarayana, P.N. Dixit, Sushil Kumar and C. M. S. Rauthan, Ind. J. Pure and Appl. Phys. 46(2008) 797-805 (Impact factor=0.34) (Times Cited=SIX)3. “Plasma diagnostic studies of an S bend filtered cathodic vacuum arc system for the deposition of tetrahedral amorphous carbon films” by O. S. Panwar, Mohd. Alim Khan, P.N. Dixit, B.S. Satyanarayana, R. Bhattacharyya, Sushil Kumar and C. M. S. Rauthan, Ind. J. Pure and Appl. Phys. 46(2008)255-260 (Impact factor=0.763) (Times Cited= FIVE)4. “Custom Designed and Indigenously Developed FCVA System for Deposition of Tetrahedral Amorphous Carbon (ta-C) Films at NPL” by O. S. Panwar, Mohd. Alim Khan, P. N. Dixit, R. Bhattacharyya and B.S. Satyanarayana, C.S.I.R. News Vol. 56, No.9 (15th May 2006) p.129-130.5. “Field Emission in Diamond Like Carbon Films Grown by Various Techniques”by O. S. Panwar, Sushil Kumar, S.S.Rajput, Rajnish Sharma and R.Bhattacharyya,, Ind. J. Pure and Appl. Phys. 41(2003)175-182 (Impact factor=0.763) (Times Cited=ONE)6. "High Rate Growth of Amorphous Hydrogenated Silicon Films and Their Applications" by Tanay Seth, C. Mukherjee, C. Anandan, P.N. Dixit, O. S. Panwar, S.S. Bawa and R. Bhattacharyya, IETE Journal of Research, 43 (l997)131-142 (Impact factor=0.20)7. "Evaluation of the Ratio of (C-sp3 / C-sp2) in Hydrogenated Amorphous Carbon (a-C:H) from Analysis of Dielectric Constants" by B.S. Verma, A. Basu, O. S. Panwar, P.N. Dixit, D.Sarangi, M. Kar and R. Bhattacharyya, NPL Technical Bulletin, July 94. p. 8-16.8. "Effect of Hydrogen Dilution During P-Layer Growth on Solar Cell Characteristics of Narrow Gap Amorphous Silicon P-I-N Solar Cells" by P. N. Dixit, O. S. Panwar, B. S. Satyanarayana, Tanay Seth, R. Bhattacharyya and V.V. Shah, J. Solar Energy Society of India, 3 (1993) 99- 104.9. "Comparative Study of High Rate Deposited Amorphous Silicon Films Prepared Under RF and DC Glow Discharge" by Tanay Seth, P.N. Dixit, O. S. Panwar and R. Bhattacharyya, Indian J. Pure and Applied Phys., 31 (1993) 315-318 (Impact factor=0.763) (Times Cited=ONE)10. "Optical Emission Spectroscopic Studies of Glow Discharge Decomposition of Silane in Cascaded Reactors" by P.N. Dixit, O. S. Panwar, R. Bhattacharyya and V.V. Shah, Indian J. Pure and Appl. Phys. 30 (1992) 335-339 (Impact factor=0.763) (Times Cited=TWO)11. "Hydrogen Evolution and Spectroscopic Ellipsometry of Hydrogenated Amorphous Silicon Films Grown in Cascaded Glow Discharge Reactors" by B.S. Satyanarayana, O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, R. Bhattacharyya and V.V. Shah in Int. Conf. on `Semiconductor Materials' held at New Delhi from 8-16 Dec. 1988; J. Semiconductor Materials and Devices, 1 (1989) 34-37.12. "Hydrogenated Amorphous Silicon Thin Films and Devices" by P.N. Dixit, O. S. Panwar, B.S. Satyanarayana, Ajay Tyagi, Tanay Seth, R. Bhattacharyya and V.V. Shah, N.P.L. Technical Bulletin, July, 1989, p.1-18.13. "Amorphous Semiconductor Devices: Memory and Switching Mechanism" by K.N. Lakshminarayan, K.K. Srivastava, O. S. Panwar and A Kumar, J. Inst. Electronics and Telecom. Engrs., 27 (1981) 16-19. (Impact Factor = 0.200)14. "Photoconductivity of Amorphous As-Ge-Te Films" by S. Singh, O. S. Panwar, K.K. Srivastava and K.N. Lakshminarayan, Nat. Acad. Sci. Lett., 3 (1980) 213-217 (Impact factor=0.211)15. "RC Network Model for Amorphous Semiconductors" by M. Radhakrishna, O. S. Panwar, K.K. Srivastava and K.N. Lakshminarayan, Nat. Acad. Sci. Lett., 1 (1978) 263-265. (Impact factor=0.211)16. "Electrode Problems for Amorphous Semiconductor Devices" by O. S. Panwar, D.R. Goyal, A. Kumar, D.R. Ravikar, K.K. Srivastava and K.N. Lakshminarayan, Nat. Acad. Sci. Lett., 1(1978) 227-228 (Impact factor=0.211) (Times Cited =FOUR)17. "Conductivity and Switching Characteristics of Glassy Alloy As10 Ge 15 Te75” by D.R. Goyal, O. S. Panwar K.K. Srivastava, K.N. Lakshminarayan, A. Kumar and D.R. Ravikar, Ind. J. Pure and Appl. Phys., 15 (1977) 10-13 (Impact factor=0.763) (Times Cited =TEN)
C. Papers published in Books
1. “New Approaches for the Performance improvement of Heterojunction and HIT solar cells” by Kamlesh Patel, Sushil Kumar, O. S. Panwar, Sreekumar C., C.M.S. Rauthan, P. Tyagi, Poster paper presented in the Proc. Of 27th European Photovoltaic Solar Energy Conference (EU PVSEC) , held during 24-28 Sept. 2012, Frankfurt, Germany, 2648-2652, doi:10.4229/27th EUPVSEC 2012-13 DV.2.25.2. “Hydrogenated Amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbonarc technique” by O.S. Panwar, Ishpal, R.K. Tripathi, Sushil Kumar, Proc. SPIE Vol. 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491M (October 15, 2012); doi:10.1117/12.9246293. “Improvement in simulation results of heterojunction and HIT solar cells” by Kamlesh Patel, O.S. Panwar,Atul Bisht, Sreekumar Chocklingham, Sushil Kumar, C.M.S. Rauthan, Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490E (October 15, 2012); doi:10.1117/12.927395 . 4. “ Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by filtered anodic jet carbon arc technique “ by R.K. Tripathi, O.S. Panwar, Ajay Kesarwani, Sushil Kumar,A, Basu, Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492F (October 15, 2012); doi:10.1117/12.927423.5. “ Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application” by NeerajDwivedi, Sushil Kumar, Saurabh Dayal, C.M.S. Rauthan, O. S. Panwar, H. K. Malik,Proc. SPIE Volume 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493A (October 15, 2012); doi:10.1117/12.925536.6. “New Approaches for the Performance improvement of Heterojunction and HIT solar cells” by Kamlesh Patel, Sushil Kumar, O. S. Panwar, Sreekumar C., C.M.S. Rauthan, P. Tyagi, Poster paper presented in the Proc. Of 27th European Photovoltaic Solar Energy Conference (EU PVSEC) , held during 24-28 Sept. 2012, Frankfurt, Germany, 2648-2652, doi:10.4229/27th EUPVSEC 2012-13 DV.2.25.7. “Properties of Pure and Nitrogen Doped Amorphous Carbon Films Having Nanoparticle Inclusions” by O. S. Panwar, Sushil Kumar, Ishpal, A. K. Srivastava, P. K. Siwach, Abhilasha Chouksey, C. M. S. Rauthan and S. Chockalingam, in “The Physics of Semiconductor Devices: Technical Digest”(Excel India Publishers, New Delhi, 2009) p. 914-917.8. “Electronic Properties of Hydrogenated Nano-crystalline Silicon Films Grown at Various Argon Dilutions By PECVD Technique” by A. Parashar, Sushil Kumar, Jhuma Gope, C.M.S. Rauthan, S.A. Hashmi, O. S. Panwar and P.N.Dixit, in “The Physics of Semiconductor Devices: Technical Digest”(Excel India Publishers, New Delhi, 2009) p.1166-1168.9. “RF Power Density Dependence Growth of Hydrogenated Silicon Films Using PECVD Technique” by A. Parashar, Sushil Kumar, Jhuma Gope, C.M.S. Rauthan, P.N. Dixit, P.K. Siwach, O. S. Panwar and S. A. Hashmi in “Technical Digest of 18th Photovoltaic Science and Engineering Conference and Exhibition (PVSEC 18)”, held from Jan.19-23, 2009 at Science City Convention Chatterjee, Centre, Kolkata (India), Eds: Swati Ray and Parsarthi Macmillan Publishers India Ltd., New Delhi, 2009) p. 213-214.10. “Effect of Crystallinity on Photosensitivity and Stability of Amorphous and Nano crystalline Silicon Films” by Jhuma Gope, Sushil kumar, A. Parashar, C.M.S. Rauthan, P.N. Dixit, P.K. Siwach, O. S. Panwar and S.C. Agarwal in “Technical Digest of 18th Photovoltaic Science and Engineering Conference and Exhibition (PVSEC 18)”, held from Jan.19-23, 2009 at Science City Convention Centre, Kolkata (India), Eds: Swati Ray and Parsarthi Chatterjee, Macmillan Publishers India Ltd., New Delhi, 2009. p 243-244.11. “Influence of Plasma Parameters on the Growth of Silicon Films” by Sushil kumar, A. Parashar, Jhuma Gope, C.M.S. Rauthan, P.N. Dixit, P.K.Siwach and O. S. Panwar, in“Technical Digest of 18th Photovoltaic Science and Engineering Conference and Exhibition (PVSEC 18)”, held from Jan.19-23, 2009 at Science City Convention Centre, Kolkata (India), Eds: Swati Ray and Parsarthi Chatterjee, Macmillan Publishers India Ltd., New Delhi, 2009. p 283-284.12. “Electron Field-Emission From Hydrogen Incorporated Tetrahedral Amorphous Carbon Films Grown Using an S Bend Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, B.S. Satyanarayana, P.N. Dixit, Sushil Kumar and M.Y. Khan in ‘The Physics of Semiconductor Devices’ edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1646- 1649.13. “Electron Field-Emission From As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Grown Using L Bend Pulsed Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, N. L. Rupesinghe and G. A. J. Amaratunga in ‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1642-1645.14. “Study of Pure and Doped Tetrahedral Amorphous Carbon Films Deposited Using Filtered Cathodic Vacuum Arc Process”by O. S. Panwar, Mohd. Alim Khan, P. N. Dixit, B. S. Satyanarayana, R. Bhattacharyya and M. Husain in ‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1621-1625.15. “Effect of Boron Doping in Tetrahedral Amorphous Carbon Films Grown Using Filtered Cathodic Vacuum Arc Process” by Mohd. Alim Khan, O. S. Panwar, P. N. Dixit, B.S. Satyanarayana, M. Dilshad, A. Bhardwaj and M. Y. Khan in ‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1617- 1620.16. “Raman and Morphological Studies of Boron Incorporated Tetrahedral Amorphous Carbon Films Grown Using Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, B.S. Satyanarayana, Mohd. Alim Khan, Ram Kishore, K.N. Sood, P.N. Dixit and M.Y. Khan in‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1556- 1559.17. “Estimation of Defects in Hydrogenated Nanocrystalline Silicon Films Using Constant Photocurrent Method” by M. Dilshad, A. Bhardwaj, O. S. Panwar, Sushil Kumar, C.M.S. Rauthan, S.S. Rajput and P.N. Dixit in ‘The Physics of Semiconductor Devices’, Edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1515-1518.18. “Langmuir Probe Studies of the Filtered Cathodic Vacuum Arc Process for the Deposition of Tetrahedral Amorphous Carbon Films” by Mohd. Alim Khan, O. S. Panwar, P. N. Dixit, R. Bhattacharyya, B. S. Satyanarayana and M.Y. Khan in ‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1348-1352.19 “Investigations on Tetrahedral Amorphous Carbon Films Grown Using An Indigenously Developed Filtered Cathodic Vacuum Arc System” by O. S. Panwar, Mohd. Alim Khan, B.S. Satyanarayana, P.N. Dixit, Sushil Kumar and R. Bhattacharyya in ‘Physics of Semiconductor Devices’, edited by K.N. Bhat and A. D. Gupta (Narosa Publishing House, New Delhi, 2004) p.1148-1150.20. “Disorder in Diamond Like Carbon Films” by Sushil Kumar, P.N. Dixit, O. S. Panwar and R. Bhattacharyya in ‘Crystal Growth and Characterization ‘, edited by S.K. Gupta, S.K. Haldar and G. Bhagavanarayana (National Physical Laboratory, New Delhi, India, 2001) p. 473-477.21. “Effect of Nitrogen Dilution on the Mechanical Properties of Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya in “Physics of Semiconductor Devices” (Vol. 2), edited by V. Kumar and S K. Agarwal, (Allied Publishers Limited, New Delhi, 2000) p.1404 –1407.22. “Field Emission From Diamond Like Carbon Films Grown By RF PECVD Technique by Using Various Hydrocarbons” by O. S. Panwar, Sushil Kumar, S.S. Rajput, Rajnish Sharma and R. Bhattacharyya in “Physics of Semiconductor Devices” (Vol. 2), edited by V. Kumar and S. K. Agarwal, (Allied Publishers Limited, New Delhi, 2000) p. 1400 – 1403.23. “Applications of Hydrogenated Amorphous Carbon Films” by Rajnish Sharma, Sushil Kumar, Sudhir Kumar, O. S. Panwar, P.N. Dixit and R. Bhattacharyya in “Advances in Carbon Materials : Indian Scenario” Edited by O.P. Bahl and T.L.Dhami, (Shipra Publications, Delhi , 1999 ) p. 269 – 276.24. "Diamond Like Carbon as an Optical Material for the Infrared Region" by Sushil Kumar, P.N. Dixit, D. Sarangi, O. S. Panwar, A. Basu, B.S. Verma and R. Bhattacharyya, in ‘Optics and Optoelectronis: Theory, Devices and Applications’, edited by O.P.Nijhawan, A.K.Gupta, A.K. Musla and Kehar Singh (Vol. 1) (Narosa Publication House, New Delhi, 1999) p. 552-556.25. "Photothermal Deflection Spectroscopy and Space Charge Limited Conduction Studies in Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source) by D. Sarangi, O. S. Panwar and R. Bhattacharyya in `Physics of Semiconductor Devices,' edited by V. Kumar and S.K. Agarwal (Narosa Publishing House, New Delhi, l998) p 1251-1254.26. "Infrared Absorption Study of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in an Asymmetric R.F. Plasma CVD System at Room Temperature" by O. S. Panwar and C. Mukherjee in `Physics of Semiconductor Devices', edited by V. Kumar and S.K. Agarwal (Narosa Publishing House, New Delhi, l998) p 648-651.27. "Photothermal Deflection Spectroscopy Study of Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source" by D. Sarangi, O. S. Panwar, C. Mukherjee, Sushil Kumar and R. Bhattacharyya in `Thin Film Characterization and Applications' edited by Sa.K. Narayandass and D. Mangalaraj (Allied Publishers Limited, New Delhi, 1996) p. 314-318.28. "Hydrogen Evolution and Surface Morphology of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in Asymmetric Plasma CVD System at Room Temperature" by O. S. Panwar, C. Mukherjee, Tanay Seth, P.N. Dixit and R. Bhattacharyya. In `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p.617-619.29. "EPR Study of As-Deposited and Low-Temperature Crystallized LPCVD and APCVD Amorphous Silicon Films" by O. S. Panwar, T.J. Ennis, R.C. Barklie and R.A.Moore in `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p. 605-607.30. "Analysis of Dielectric Constants to Determine sp3 / sp2 Ratio in Hydrogenated Amorphous Crabon (a-C:H) Films” by B.S. Verma, A. Basu, O. S. Panwar, P.N. Dixit, D. Sarangi, M. Kar and R. Bhattacharyya in `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p.430-432. (Times Cited =ONE)31. "Spectroscopic Ellipsometric Study of Diamond Like Films Using a Saddle Field Source" by O. S. Panwar, D. Sarangi, B.R. Mehta and R. Bhattacharyya. in `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p.424 - 426.32. "Thermal Equilibrium Defect Processes in n-Type a-Si:H Under Illumination" by Sushil Kumar, P.N. Dixit, O. S. Panwar, Tanay Seth and R. Bhattacharyya in `Physics of Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1993) p.598-600.33. "Metastabilities in Undoped a-Si 1-x Ge x: H Alloys by A. K. Sinha, P. Agarwal, S. Kumar, S.C. Agarwal, P.N. Dixit, O. S. Panwar, Tanay Seth and R. Bhattacharyya in `Physics of Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1993) p.595-597.34. "Effect of In-situ Thermal Relaxation on Optoelectronic Properties of Hydrogenated Amorphous Silicon Film Prepared in a Multizone UHV Plasma CVD System" by O. S. Panwar, P.N. Dixit, B.S. Satyanarayana and R. Bhattachryya in `Physics of Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1993) p.583-585.35. "Effect of Various Process Parameters on the Properties of Hydrogenated Amorphous Silicon Germanium films Grown in a Multizone Plasma CVD Reactor" by O. S. Panwar, P.N. Dixit, and R. Bhattacharyya in Proc. VI Int. “Photovoltaic Science and Engineering Conf.”, edited by B.K. Das and S.N. Singh (Oxford and IBH Publishing Company Pvt. Ltd., New Delhi, 1992) p. 621-626.36. "Role of P-layer Grown Using Different Source Gas Combinations for the Improvement of P-I-N Hydrogenated Amorphous Silicon Solar Cells" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V. V. Shah in Proc. VI Int. “Photovoltaic Science and Engineering Conf.”, edited by B.K. Das and S.N. Singh (Oxford and IBH Publishing Company Pvt. Ltd., New Delhi,(1992) p. 351-356.37. "Effect of Carbon Grading and Buffer Layer at the P/I Interface on the Performance of P-I-N Amorphous Silicon Solar Cells" by P.N. Dixit, O. S. Panwar, B.S. Satyanarayan, Tanay Seth, R. Bhattacharyya and V.V. Shah in Proc. of 6th Int. “Photovoltaic Science and Engineering Conf.”, edited by B.K. Das and S.N. Singh (Oxford and IBH Publishing Company Pvt. Ltd., New Delhi, 1992) p.345-350.38. "Spectroscopic Ellipsometry Analysis of Hydrogenated Amorphous Silicon Films in Cascaded Glow Discharge Reactors" by Ajay Tyagi, A. Basu, Nakul Parashar, O. S. Panwar, P.N.Dixit, R. Bhattacharyya and V.V. Shah in Proc. Int. Conf. on `Disordered Materials (Structure and Property)' edited by S.K. Mitra (India's publication, 1991) p.167-169.39. "High Performance Thin Film Transistors in Low-Temperature Crystallized LPCVD and APCVD Amorphous Silicon Films" by O. S. Panwar in Suppl. Proc. of Vth Int. Workshop on `Physics of Semiconductor Devices', edited by W.S. Khokle and S.C. Jain, Mc Millan India Ltd. Delhi (1990) p.77-78.40. "Comparative Study of Growth Morphology of a-Si:H Films Prepared In Cascaded Glow Discharge Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar, C. Anandan and V.V. Shah, in `Physics of Semiconductor and Devices', edited by J.C. Garg and P.C. Mathur (Puneet Press, Meerut, 1986) p 124-130.41. "Investigations of a-Si:H Films Grown In Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R.Bhattacharyya and V.V. Shah in `Photovoltaic Material and Devices' edited by B.K. Das and S.N. Singh (Wiley Eastern Ltd.,1985, New Delhi) p. 227-237.
D. Papers published in International Conferences1. “Studies of nano-mechanical properties of metal (copper and titanium) / diamond- like carbon bilayer thin films” by Neeraj Dwivedi, Sushil Kumar, H.K. Malik, C. M. S. Rauthan, O. S. Panwar, Abstract accepted as poster paper in “22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides in Diamond 2011, held at Garmisch-Partenkirchen, Bavaria, Germany from 4-8 Sept., 2011.2. “Hydrogenated Amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique” by O.S. Panwar, Ishpal, R.K. Tripathi, Sushil Kumar, Oral presentation in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur, Kanpur (U.P.) from 19-22 Dec, 2011.3. “Improvement in simulation results of heterojunction and HIT solar cells” by Kamlesh Patel, O.S. Panwar, Atul Bisht, Sreekumar Chocklingham, Sushil Kumar, C.M.S. Rauthan, Poster paper in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur, Kanpur (U.P.) from 19-22 Dec, 2011.4. “Filtered cathodic vacuum arc for the deposition of phosphorus doped amorphous/microcrystalline silicon films for solar cells” by Ajay Kesarwani, O. S. Panwar, R.K. Tripathi, Atul Bisht, Sushil Kumar, Kamlesh Patel, Poster paper in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur, Kanpur (U.P.) from 19-22 Dec, 2011.5. “Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by filtered anodic jet carbon arc technique” by R.K. Tripathi, O.S. Panwar, Ajay Kesarwani, Sushil Kumar, A,Basu, Poster paper in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur, Kanpur (U.P.) from 19-22 Dec, 2011.6. “ Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application” by Neeraj Dwivedi, Sushil Kumar, Saurabh Dayal, C.M.S. Rauthan, O. S. Panwar, H. K. Malik, Poster paper in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur,Kanpur (U.P.) from 19-22 Dec, 2011.7. “A Comparative Study of Field Emission From Diverse Nanocarbon Based Electron Emitters and aPossible Correlation With The Raman Response” by B.S. Satyanarayana, Niranjana S., Shounak De, R. Bhattacharyya and O. S. Panwar, in “Proceeding of 9th Asian Symposium \ on Information Display, the ASID 06”, held at New Delhi (India) from Oct. 8-12, 2006, p.448-451.8 “Simulation Study of a New Amorphous Silicon Thin Film Transistor With Tetrahedral Amorphous Carbon As Gate Dielectric” by B.S. Satyanarayana, Shounak De, R Bhattacharyya and O. S. Panwar, in “Proceeding of 9th Asian Symposium on Information Display, the ASID 06”, held at New Delhi (India) from Oct. 8-12, 2006, p.411.9. “Diamond Like Carbon Films Grown by Saddle Field Fast Atom Beam Source at Different Substrate Biases” by Rajnish Sharma, Sushil Kumar , P.N. Dixit, O. S. Panwar, Sudhir Kumar, C. M. S. Rauthan, K.M.K. Srivatsa, P.J. George and R. Bhattacharyya,Oral Presentation in MRS Symp., held from 28th March- April 1st, 2005 at San Francisco, California, USA) (Ref. No.T1.3)10. “ESR Study of Tetrahedral Amorphous Carbon Films Grown Using an Indigenously Developed Filtered Cathodic vacuum Arc System” by S. K. Gupta, Manju Arora, O. S. Panwar, Mohd. Alim Khan, P.N. Dixit and M. Hussain, Extended Abstract in Proc. Asia Pacific EPR / ESR Symposium 2004, held at I.I. Sc. Bangalore from Nov. 22-25, 2004.11. “ESR Study of Tetrahedral Amorphous Carbon Films Grown Using an Indigenously Developed Filtered Catodic vacuum Arc System” by S. K. Gupta, Manju Arora, O. S. Panwar, Mohd. Alim Khan, P.N. Dixit and M. Hussain, Extended Abstract in Proc. Asia Pacific EPR/ ESR Symposium 2004, held at I.I. Sc. Bangalore from Nov. 22-25, 2004. 12. “Field Emission from Tetrahedral Amorphous Carbon Films Grown using a Triggerless Pulsed Cathode Arc Process” by B.S. Satyanarayana, O. S. Panwar and Mohd. Alim Khan in “ Proc of 16th Int. Micro ElectronicsVacuum Conference (IMVC)”, held from July 7-11, 2003 at Osaka, Japan. (P1-44)13. “Effect of Substrate Bias on SE, XPS and XAES Studies of Diamond Like Carbon Films Deposited by Saddle Field Fast Atom Beam Source” by Rajnish Sharma, O. S. Panwar, Sushil Kumar, D. Sarangi, A. Goullet, P.N. Dixit and R. Bhattacharyya, Extended Abstract in ‘Diamond 2002’ held at Granada, Spain from 8-13 Sept. 2002.14. “Field Emission from Doped and Undoped Tetrahedral Amorphous Carbon Grown Using Direct and Pulsed Cathode Arc Process” by B.S. Satyanarayana, O. S. Panwar and Shashank Sharma in “Proc of 15th Int. Micro Eelectronics Vacuum Conference (IVMC)”, held from July 7-11, 2002 at Lyon, France.15. "Study of Tetrahedral Amorphous Carbon films Grown Using Direct and Pulsed Source Cathodic Arc System" by B.S. Satyanarayana, O. S. Panwar, Shashank Sharma, Sushil Kumar and R. Bhattacharyya, Extended abstract accepted in XI workshop on Physics of Semiconductor Devices held at I.I.T. Delhi from 11-15 Dec. 2001.16. "Diamond Like Carbon Films Formed by a Filtered Fast Atom Beam Source" by D. Sarangi, O. S. Panwar,Sushil Kumar, P.N. Dixit and R. Bhattacharyya, Oral Presentation in Int. Conf. on Metallurgical Coatings and Thin Films (ICMCTF-97) held on April 21-25, l997 at San Diego, California, USA) (Ref. No.B5.07).17. "Diamond- Like Carbon Films with Extremely Low Stress" by Sushil Kumar, D. Sarangi, P.N. Dixit, O.S. Panwar and R. Bhattacharyya, Oral presentation in Int. Conf. on Metallurgical Coatings and Thin Films (ICMCTF-98) held on April 27- May l, l998 at San Diego, California, USA) Ref. No. D3-9.18. "Hydrogenated Amorphous Silicon Film Grown by Glow-Discharge Hot Sheet CVD Technique" by P.N. Dixit, Sushil Kumar, C. Mukherjee, D. Sarangi, O. S. Panwar and R. Bhattacharyya in Proc.VIII Int. Workshop on `Physics of Semiconductor Devices' held at New Delhi from Dec., 11-16, 1995.19. "Effect of Hydrogen Dilution on a-Si:H and Boron Doped a-SiC:H Films Grown in a Multizone Plasma CVD System" by B.S. Satyanarayana, P.N. Dixit, O. S. Panwar, Tanay Seth, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in IInd Int. Conf. on `Semiconductor Materials', New Delhi, Dec.14-19, 1992.20. "Effect of Power and Pressure on the Properties of High Rate Deposited Hydrogenated Amorphous Silicon Films " by Tanay Seth, P.N. Dixit, B.S. Satyanarayana, O. S. Panwar, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in 20th Int. Conf. Of Physics of Semiconductors held at Thessaloniki, Greecefrom Aug. 6-10, 1990 (Extended Abstract)21. "Low-Temperature Crystallization of Low-Pressure and Atmospheric Pressure Chemical Vapor Deposited Amorphous Silicon Films to Produce Large Grain Structure" by O. S. Panwar in Int. Conf. on `Semiconductor Materials' held at New Delhi from Dec. 8-16, 1988.22. "Self Aligned Polysilicon Gate TFTs for Flat Panel Displays" by O. S. Panwar, N.S.J. Mitchell, S.H. Raza, J.H. Montgomery, H.S. Gamble, B.M. Armstrong and R.A. Moore in First Int. Conf. on `Microelectronics 88' held in Algiers, Nov. 1988.23. "Low -Temperature Crystallization of Amorphous Silicon Films for the Fabrication of Thin Film Transistors" by O. S. Panwar, R.A. Moore, N.S.J. Mitchell, H.S. Gamble and B.M. Armstrong in Proc. European Material Research Society Conf. on `Photon, Beam and Plasma Assisted Processing Fundamentals and Device Technology' held at Strasbourg, France from May 31 - June 2, 1988.
E. Papers published in National Symposiums1. “Formation and Properties of Amorphous Carbon Films Embedded with Nanoparticles Deposited by Filtered Anodic Jet Carbon Arc Technique” by O. S. Panwar, R. K. Tripathi, C. Sreekumar, A. K. Srivastava and Sushil Kumar, Poster paper in the 22nd Annual General Meeting of Materials Research Society of India (MRSI), held at Bhopal from Feb.14-16, 2011.2. “Mechanical Properties of Hydrogen and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc Technique“ authored by O. S. Panwar, C. Sreekumar, R. K. Tripathi and Sushil Kumar, Poster paper in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal from Feb.14-16, 2011.3. “Importance of Hydrogenated Amorphous Carbon Films for the Development of Solar Cells” by Neeraj Dwiedi, Sukhbir Singh, Saurabh Dayal, Sushil Kumar, H. K. Malik, O. S. Panwar, C.M.S. Rauthan, Abstract of the Poster Paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-20.4. “Effect of Hydrogenated Amorphous Carbon as Antireflecting Coating Layer on Silicon Solar Cells” by Saurabh Dayal, Neeraj Dwiedi, Sushil Kumar, C. M. S. Rauthan, O. S. Panwar, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-21.5. “Use of Carbon thin layer as a Protective Coating on Solar Cells” by R. K. Tripathi, O. S. Panwar, Ajay Kesarwani, Kamlesh Patel, Sushil Kumar, C.M.S. Rauthan, Sreekumar Chockalingam, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-22.6. “Filtered Cathodic Vacuum Arc Technique for the Deposition of Amorphous Silicon Thin Films” by Ajay Kesarwani, O. S. Panwar, R. K. Tripathi, Atul Bisht, Sushil Kumar, Kamlesh Patel, Sreekumar Chockalingam, C. M. S. Rauthan, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-24.7. “Use of Plasmonics for Enhancing the Efficiency of Solar Cells” by Atul Bisht, O. S. Panwar, Ajay Kesarwani, Kamlesh Patel, Sushil Kumar, Sreekumar Chockalingam, C. M. S. Rauthan, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-25.8. “Development of Heterojunction (HIT) Solar Cells With Intrinsic Thin Layer” by Kamlesh Patel, Sushil Kumar, C. M. S. Rauthan, O. S. Panwar, Abstract of the Poster paper in in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-26.9. “Study of optical property of silver nanoparticle by nanosphere optics lab field simulator” by Atul Bisht , O.S. Panwar, Ajay Kesarwani, R. K. Tripathi, Kamlesh Patel, Sushil Kumar, Poster paper in the 23rd Annual General Meeting of Materials Research Society of India (MRSI) held at Patiala from Feb.13-15, 2012.10. “Study of Phosphorus Doped Silicon Thin Film Grown by Filtered Cathodic Vacuum Arc Technique” by Ajay Kumar Kesarwani, O. S. Panwar, R. K. Tripathi, Atul Bisht, Sreekumar Chockalingam, Poster paper in TAPSUN National Conference on `Advances in Futuristic Solar Energy Technologies’, held at NPL, New Delhi from 4-5 Dec.2012. p.63.11. “Phosphorus Doped Amorphous Silicon Carbide Film Deposited by Filtered Cathodic Vacuum Arc Technique” by R. K. Tripathi, O. S. Panwar, Ajay Kesarwani, Sreekumar Chockalingam, Poster paper in TAPSUN National Conference on `Advances in Futuristic Solar Energy Technologies’, held at NPL, New Delhi from 4-5 Dec.2012.p.64.12. “Growth of Silver Nanostructure for Plasmonics in Solar Cell” by Atul Bisht, O. S. Panwar, Ajay Kesarwani, Sreekumar Chockalingam, Poster paper in TAPSUN National Conference on `Advances in Futuristic Solar Energy Technologies’, held at NPL, New Delhi from 4-5 Dec.2012.p. 65.13 “Formation and Properties of Amorphous Carbon Films Embedded with Nanoparticles Deposited by Filtered Anodic Jet Carbon Arc Technique” by O. S. Panwar, R. K. Tripathi, C. Sreekumar, A. K. Srivastava and Sushil Kumar, in the 22nd Annual General Meeting of Materials Research Society of India (MRSI), held at Bhopal from Feb.14-16, 2011.14. “Mechanical Properties of Hydrogen and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc Technique“ authored by O. S. Panwar, C. Sreekumar, R. K. Tripathi and Sushil Kumar, in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal from Feb.14-16, 2011.15. “Correlation of Plasma Parameters with the Properties of DLC Films” By Sushil Kumar, Ishpal, Neeraj Dwivedi, C.M.S. Rauthan and O. S. Panwar, Oral presentation in National Conference on Recent Advances in Surface Engineering (RASE09)held at N.A.L., Bangalore from Feb. 26-2, 2009(O: 46)16. “Impedance Measurements of Hydrocarbon Plasma for the Growth of the Diamond Like Carbon Films” by Ishpal, Sushil Kumar, Neeraj Dwivedi, C.M.S. Rauthan and O. S. Panwar, Extended Abstract in “National Conference on Photonics and Materials Science(NCPMS) held at Deptt. of Applied Physics, Guru Jambheshwar University of Science and Technology, Hisar, Haryana (India) from Oct. 24-25, 2008.17. “Custom Designed and Indigenously Developed Filtered Cathodic vacuum Arc System for the Deposition of Films at NPL” by O. S. Panwar, P. N. Dixit and R. Bhattacharyya, in 18th Annual General Meeting of Materials Research Society of India (MRSI), held at National Physical Laboratory, New Delhi from Feb.,12-14, 2007, p.232-233.18. “Electron Field-Emission from Tetrahedral Amorphous Carbon Films Grown Using an S Bend Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, B. S. Satyanarayana, P.N. Dixit and M.Y. Khan, MITDISC-2005-National Conference on Devices, Intelligent Systems and Communications’, held at Manipal Institute of Technology, Manipal from Sept. 21st to 7th Oct. 2005, p.15-20.19. "Surface Analysis of Diamond -Like Carbon Films Grown by Saddle Field Fast Atom Beam Source” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya in `20 th National Conference of the Electron Microscope Society of India', held at IACS, Calcutta from Dec.,5-7, 1996.20. "Effect of Hydrogen Dilution on Boron Doped Hydrogenated Amorphous Silicon Carbide Films Grown in a Multizone Plasma CVD System" by B.S. Satyanarayana, P.N. Dixit, O. S. Panwar, Tanay Seth, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in `2nd Annual General Meeting of Material Research Society of India' held at NPL, New Delhi on Feb. 9-10, 1991.21. "Effect of Power and Pressure on the Properties of High Rate Deposited Hydrogenated Amorphous Silicon Films" by Tanay Seth, P.N. Dixit, B.S. Satyanarayana, O. S. Panwar, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in `2nd Annual General Meeting of Material Research Society of India' held at NPL, New Delhi on Feb. 9-10, 1991.22. "Properties of Boron Doped Hydrogenated Amorphous Silicon Films Prepared By Glow Discharge Decomposition In Dilute Silane" by O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, R. Bhattacharyya and V.V. Shah in 6th Nat. Seminar on `Semi conductor Devices', held at Calcutta from Dec., 10-12, 1986.23."Mass Spectroscopic Analysis of Silane Plasma During Growth of a-Si:H Films in Cascaded Glow Discharge Reactors" by P.N. Dixit, O. S. Panwar, B. S. Satyanarayana , R. Bhattacharyya and V.V. Shah in 6th Nat. Seminar on `Semiconductor Devices', held at Calcutta from Dec. 10-12, 1986.24. "Density of Gap States in a-Si:H Films Grown in Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R. Bhattacharayya and V.V. Shah in V Nat. Seminar on `Physics of Semiconductors and Devices held at Dept. of Physics and Electronics Engineering, B. H. U. Varanasi from Dec.5-7, 1985.25. "Space Charge Limited Conduction in Pd/a-Si: H Schottky Diodes" by C. Anandan, P.N. Dixit, O. S. Panwar, R.Bhattacharyya and V.V. Shah, in Symposium on `Photovoltaic Materials and Devices', 1984 held at N.P.L., New Delhi.26 "Growth of Highly Resistive a-Si: H Films Deposited in Cascaded Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V.V. Shah, Proc. Symposium Nuclear Physics and Solid State Physics, 1983, held at Mysore.27. "R.F. Magnetron Sputtered a-Si:H Films for Solar Cells" by Satyendra Kumar, O. S. Panwar, D.K. Pandya and K.L.Chopra, Proc. National Energy Convention 1983, held at Vadroda, Baroda.28. "Photoconductivity of Pure and Doped Glasses of As-Ge-Te" by O. S. Panwar, T. Krishan, K.K. Srivastava and K.N. Lakshminarayan, Proc. Ind. Science Congress, 1982, held at Tirupati29. "Annealing Effect on Pure and Doped Glasses of As-Ge-Te" by O. S. Panwar, K.K. Srivastava and K. N. Lakshminarayan, Proc. Symposium Nuclear Physics &Solid State Physics, 23 C (1980) 860.30. "Field Dependent Conductivity on As-Ge-Te Glassy Films" by K.N. Lakshminaryan, O. S. Panwar and K.K. Srivastava, Proc. Symposium Nuclear Physics and Solid State Physics, 23 C (1980) 203-205.31. "Pure and Doped Glasses of As-Ge-Te" by O. S. Panwar , K.K.Srivastava and K.N. Lakshminarayan, Proc. Symposium on "Non- Crystalline Solids" edited by S.C. Agarwal held at I.I.T., Kanpur from Feb. 4-5, 1980, p. 77-79.32. "Simple Resistance Technique to Measure the Activation Energy and Mobility of Electromigration in Amorphous Semiconductors" by O.S. Panwar, D.R. Goyal, A. Kumar, K.K. Srivastava and K.N. Lakshminarayan, Proc. Symposium Nuclear Physics and Solid State Physics, 20C (1977) 683-685.33. "Behavioral Characteristics of Glassy As-Ge-Te Alloy Systems" by A. Kumar, O. S. Panwar, D.R. Goyal, K.N. Lakshminarayan and K.K. Srivastava, Proc. Symposium Nuclear Physics and Solid state Physics, 20C (1977) 187-189.
F. Research Report submitted in N.P.L.1. "Evaluation of the Ratio of (C-sp3 / C-sp2) in hydrogenated Amorphous Carbon (a-C: H) from Analysis of Dielectric Constants" by B.S. Verma, A. Basu, O. S. Panwar, P.N. Dixit, D. Sarangi, M. Kar and R. Bhattacharyya, Report No. NPL-94-C1.5-0005.2. "Plasma Spectroscopic Analysis of Glow Discharge Decomposition of Silane in Cascaded Reactors" by P.N. Dixit, O. S. Panwar, B.S. Satyanarayana, R. Bhattacharyya and V.V. Shah, Report No. NPL-91-D3-0013.3. "Self Aligned Polysilicon Gate TFTs for Flat Panel Displays" by O. S. Panwar, N. S. J. Mitchell, S.H. Raza, J.H. Montgomery, H.S. Gamble, B.M. Armstrong and R.A. Moore, Report No. NPL-89-3-0021.4. "Crystallization of APCVD Amorphous Silicon Films at Low- Temperatures to Produce Large Grains" by O. S. Panwar, R.A. Moore, S.H. Raza, H.S.Gamble and B.M. Armstrong, Report No. NPL-89-D3-0018.5. "Low-Temperature Crystallization of Amorphous Silicon Films for the Fabrication of Thin Film Transistors" by O. S. Panwar, R.A. Moore, N.S.J. Mitchell, H.S. Gamble and B.M. Armstrong, Report No. NPL-89-D3-0017.6. "Electrical Properties of Boron Doped Hydrogenated Amorphous Silicon Films by Glow Discharge Decomposition of Diluted Silane" by O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, B.S. Satyanarayana, R. Bhattacharyya and V.V. Shah, Report No. NPL-88-D3-0036.7. "Density of Gap States in a-Si: H Films Grown in Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R. Bhattacharyya and V.V. Shah, Report No. NPL-88-D3-0035.8. "Hydrogenated Amorphous Silicon Films Prepared in Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R.Bhattaryya and V.V. Shah, Report No. NPL-86-D3-0025.9. "Light Induced Conductivity Changes in Hydrogenated Amorphous Silicon Films Prepared in Cascaded Glow Discharge Reactors” by O. S. Panwar, P. N. Dixit, R. Bhattacharyya and V.V. Shah, Report No. NPL-86-D3-0051.10. "Comparative Study of Growth Morphology in a-Si:H Films Prepared in Cascaded Glow Discharge Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar, C.Anandan and V.V.Shah, Report No.NPL-86-D3-005011. "Design and Fabrication of Glow Discharge System for Amorphous Silicon Films by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V.V. Shah, Report No. NPL-86-D3-0048.
G. Paper in Hindi1. “Custom Designed and Indigenously Developed FCVA System for deposition Tetrahedral Amorphous Carbon (ta-C) Films at NPL” by O. S. Panwar, Mohd. Alim Khan, P. N. Dixit, R. Bhattacharyya and B.S. Satyanarayana, NPL Samiksha 26( 2005) 3.2. “Diamond and Diamond Like Carbon “ by Rajnish Sharma, Sushil Kumar, P.N Dixit, Sudheer Kumar, O. S. Panwar and R. Bhattacharyya, NPL Samiksha 22(4) (1999)1-3.
H. Invited talks/papers/lectures1. “Photothermal Deflection Spectroscopy (PDS),A Tool to Study Optical Absorption in Silicon and Polymer Multilayered Thin Films for Solar Cell Applications” by Sreekumar Chockalingam and O. S. Panwar, Invited Talk (IL-40) in “ 3rd Int. Multicomponent Polymer Conference (IMPC)”, held at Institute of Macromolecular Science and Engineering (IMSE), Kottayam, Kerala (India) from March 23-25, 2012, p. 37.2. “Tetrahedral Amorphous Carbon and Amorphous Carbon Films with Embedded Nanoparticles Deposited by Filtered Cathodic Vacuum Arc Technique” by O. S. Panwar, MRSI Medal Lecture in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal (M.P.) from Feb.14-16, 2011.3. “Novel Filtered Cathodic Vacuum Arc Technique for the Deposition of Tetrahedral Amorphous Carbon Films” by O. S. Panwar, Invited Inaugural lecture as Chief Guest in the Annual function of Department of Chemistry, Daulat Ram College, University of Delhi, Delhi, 7th Dec. 2009.4. "Different Approaches to Realize Stress Relieved Films of Diamond- Like Carbon" by Sushil Kumar, D. Sarangi, P.N. Dixit, O. S. Panwar, C. Anandan and R. Bhattacharyya, Invited talk in National Conference on `Science and Technology of Surfaces and Interfaces' held at I. I. T. Kharagpur from Dec.,16-18, 1996.5. "Polysilicon TFTs Manufactured From Material Recrystallised at Low-Temperature" by B.M. Armstrong, H.S. Gamble, N.S.J. Mitchell, O. S. Panwar and R.A. Moore, Invited Oral paper in Workshop on `Polysilicon Thin-Film Transistors and Related Material Aspects for Large Area Microelectonics' , Cambridge (U.K.) 1989.6. "Growth of Hydrogenated Amorphous Silicon Films In Cascaded Glow Discharge Reactors Systems - A Review" by P.N. Dixit, O. S. Panwar, R. Bhattacharyya and V.V. Shah, Invited talk in V Nat. Seminar on `Physics of Semiconductors and Devices', held at Dept. of Physics and Electronics Engineering, B.H.U. Varanasi from Dec.5-7, 1985.
I. Best Poster Paper Award:
1. The poster paper entitled “Field Emission From Diamond Like Carbon Films Grown By RF PECVD Technique by Using Various Hydrocarbons” by O. S. Panwar, Sushil Kumar, S. S. Rajput, Rajnish Sharma & R.Bhattacharyya, presented in 10th Int. Workshop on “Physics of Semiconductor Devices” held at I.I.T. Delhi from Dec. 14 – 18, 1999 has been adjudged the best poster paper. IEEE (India) and MTT chapter has also given a cash prize of Rs 1000/-.2. The poster paper entitled "Photothermal Deflection Spectroscopy and Space Charge Limited Conduction Studies in Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source’’ by D. Sarangi, O. S. Panwar and R. Bhattacharyya, presented in 9th Int. Workshop on `Physics of Semiconductor Devices,' held at Jamia Millia Islamia, Jamia Nagar, New Delhi from Dec. 16-20, 1997 has been adjudged the best poster paper on 17th December 1997.
11. Contribution of National/International issues; if any.
Major Significant Scientific Achievements of national and international level are listed in the following:(i) I have custom designed and indigenously developed an S bend filtered cathodic vacuum arc (FCVA) system for the first time in the country (CSIR News, Vol. 56 No.9, 15th May 2006). The system has been used to deposit pure and doped tetrahedral amorphous carbon (ta-C) films. The system has been modified and two novel “cathodic jet carbon arc” (CJCA) and “anodic jet carbon arc” (AJCA) techniques have been conceived and got fabricated and integrated into the existing system. Undoped and doped amorphous carbon films with embedded nanoparticles are being grown for enhanced tribological and field emission applications. ta-C as a novel material and Cathodic arc as a process are of great technological significance in many areas which include protective and bio compatible coatings on heart valves, protective coatings on compact discs & very fine tools.(ii) FCVA system is being used in the synthesis of few layer graphene which is a wonder material. We have succeeded in transferring graphene on any other substrate.(iii) We have also synthesized graphene oxide by MPECVD system using Ar and C2H2 gas mixture.(iv)We have developed the Process know how of stress relieved DLC coatings on Ge substrates of 250 mm size with IR transmission > 87% in 8-12 μm range which meets various MIL specification together with designing and fabricating Plasma CVD system and the same has been transferred to IRDE Dehradun (DRDO, NAG).(v)A new technique known as saddle field fast atom beam source has been set up in a conventional 30 cm dia. vacuum system for the deposition of diamond like carbon (DLC) films. We have been successful in depositing DLC films for the first time using CH4 gas using this source. Saddle field FAB grown DLC films have extremely low stress (0.10 – 0.25 GPa) and high hardness (9-22 GPa) at 50 gm load and it has been used to coat stainless rajor blades for enhancing their shaving efficiency. Further, a novel method to filter the neutral and ionic radicals coming out of a FAB source has been invented by use of a deflector arrangement placed in front of a saddle field source where DLC films can be simultaneously deposited using neutral and ionic radicals.(vi) Metal and Si incorporated DLC films have been found to show reduced stresses which are useful for tribological applications.(vii) We have developed and demonstrated high efficiency a-Si: H based solar cells (11.3%, AM1.5, 100 mW/cm2 on 1 cm2 area) and fully integrated solar panels for the operation of pocket transistors. These were tested at IACS kolkata. and were comparable to the best results reported in USA and Japan working in this area at that time. The double tandem solar cells were made using same material with different thickness.(viii) We have developed an improved process for the production of high resistivity a-Si: H films in cascaded glow discharge reactor which has been indigenously made in the laboratory (Indian patent no. 165530). The films prepared in the second reactor of the cascade when both the reactors are energized simultaneously, exhibit very high resistivity (1012-1013ohm cm), higher optical band gap (2.0 -2.1 eV), less density of states and less prone to S-W effect compared to the films prepared in the first reactor.(ix) A simple and novel Process for making large grains (up to 6400 Ao) has been explored. This is to deposit the film initially in amorphous form and then crystallize at low-temperatures instead of high temperatures. The grain size in this process is influenced by the deposition and annealing temperatures, the deposition rates and film thickness. TFTs have been fabricated in these low-temperature crystallized LPCVD and APCVD silicon films using self-aligned gate technology. Carrier mobility as high as 27-28 cm2/V sec was obtained in LPCVD silicon films.(x) a-Si: H films have been grown at high growth rate (upto 18 Ao/sec) with acceptable opto-electronic properties. These high rate deposited a-Si: H films have been used in making various devices where we use 4-6 μm thick a-Si: H films in developing pixel diodes for X-ray detectors (IIT, Kanpur), optical addressed spatial light modulators (OASLM) (for LCD group in NPL) etc.(xi)Amorphous, micro/nano silicon films are being grown at high rate using microwave/VHF PECVD system. The work of making single junction and tandem solar cells is to be started on larger areas with financial assistance from MNRE, Govt. of India under JNNSM solar mission.(xii)Preparation, characterization and switching properties of pure and doped chalcogenide glasses of As-Ge-Te and Ge-Se-Te and photo contraction effect in pure chalcogen thin films.
Address
(a) Official: Polymorphic Carbon Thin Films Group (D1.02)
Physics of Energy Harvesting Division
CSIR-National Physical Laboratory
Dr. K. S. Krishnan Marg, New Delhi-110012
(b) Residential: DG2/285 D, Vikaspuri, New Delhi-110018.
© E-mail: [email protected], [email protected]
© Areas of Research: Amorphous/ Microcrystalline Silicon and Carbon Based Materials,
Devices and Systems, Chalcogenide Glasses and Synthesis of
Graphene
Educational Qualifications
________________________________________________________________________________
Examination/ University/ Year Div./ Subject/Remarks
Degree Board % Marks
________________________________________________________________________________
High School U.P. Board 1969 Ist/70.0 Hindi, Eng, Maths, Sc& Bio
Intermediate U.P. Board 1971 Ist/67.8 Hindi, Eng, Math, Phys& Chem B.Sc. Hons. Meerut Univ. 1973 Ist/75.4 Phys, Maths & Stat.
M.Sc. Meerut Univ. 1975 Ist/69.8 PHYSICS/IInd Position
Certificate in German Panjab Univ. 1977 Ist/80.0 German language
Ph.D. Panjab Univ. 1980 Electrical Properties of pure
and doped glasses of As-Ge-Te
________________________________________________________________________________
Field of Specialization:
1. Solid State Physics, Experimental (Amorphous Semiconductors)
2. Optoelectronic Materials and Devices (Solar Cells, TFTs and Field Emission Devices)
3. Thin Films and Vacuum Technology
4. Micro/Nano Silicon and Nanocarbon thin films and graphene
Professional Experience
1. Scientist G (Now Chief Scientist) from Feb 2009 to date and Head, Plasma Processed Materials Group from Oct., 2007 to May 29, 2012 (The name of the group got changed to Amorphous and Microcrystalline Silicon Solar Cells Group since 2010 upto 29 th May 2012), Head Polymorphic Carbon Thin Films Groupin Physics of Energy Harvesting from May 29, 2012 onwards, Scientist F from Feb.2004 to Jan. 2009, Scientist EII from Feb. 1998 to Jan.2004, Scientist E I from Feb. 1993 to Jan. 1998, Scientist C from Feb. 1988 to Jan., 1993, Scientist B from Feb. 1983 to Jan. 1988, at National Physical Laboratory, New Delhi-110012.
2. Raman Research Fellow from May 2001 to July 2001 at Engineering Department, Cambridge University,
Cambridge CB2 1PZ, England.
3. Research Fellow from Oct. 1987 to June 1988 at Microelectronics and Electrical Engineering, Trinity College,
Dublin-2 (Ireland) and Honorary Research Fellow from May-June 1988 at the Department of Electrical and
Electronic Engineering, The Queen's University of Belfast, Belfast-9 (U.K.)
4. Research Associate from Jan. 1981 to Jan. 1982 and Senior Scientific Officer from Jan. 1982 to Jan. 1983
at Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016.
5. JRF and SRF from Jan. 1976 to Jan. 1980 and PDF from Jan. 1980 to Jan. 1981 at Physics Department,
Panjab University, Chandigarh-160014.
Scholarship
1. National Scholarship from July 1973 to June 1975.
2. Bursary Scholarship from July 1971 to June 1973.
3. Merit Scholarship from July 1969 to June 1971.
Honors:
A. Academic achievements
(i) Topper in the Certificate Course in German in 1977.
(ii) Topper in M. Sc. (in the college) and 2nd position in the University in 1975.
(iii) Topper in B.Sc. (in the college) and 14th position in the University in 1973.
(iv) Topper in 12th class & also of Centre (consisting of four college) (in U.P.board exam) in 1971.
(v) Topper in 10th class (in the school) (in U.P. board exam) in 1969.
B. National Cadet Corps, Certificate B, Feb., 1972 (UPSD/71/266943, 45 UP Batalian NCC, R. K. Degree
College, Shamli, M. Nagar, U.P.)(Ministry of Defense Govt. of India)
C. Best Student of Faculty of Science (1974-75) in R. K. Degree College Shamli, Muzaffarnagar (U.P.).
D. My `Biographical sketch' has been included in the following on the basis of research:
1. Several Nominations in various titles by American Biographical Institute Inc., North Carolina (USA) and
International Biography Center, Cambridge CB2 3QP, ENGLAND.
2. Best Citizens of India in the book entitled “ Honored best citizens of India” published from New Delhi,
2000.
3. International Man of the Year 2000 – 2001 in Dictionary of International Biography, published from
International Biography Center, Cambridge CB2 3QP ENGLAND.
4.Dictionary of International Biography, 26 (l998), 27 (1999) and 28 (2000), published from International Biography Center, Cambridge CB2 3QP ENGLAND.
5. Marquis Who's Who in Science and Engineering 4 (1998), published from 121 Chanlon Road, New
Providence, N.J. 07974 (USA).
6. Marquis Who's Who in the World 14 (1997) ll06, 18(2000), 31(2013 published from 121 Chanlon Road, New
Providence, N.J. 07974 (USA).
Award:
1. Bharat Jyoti Award for the year 2013 (to be given)
2. MRSI Medal award for the year 2011.
3. Raman Research Fellowship for the year 2001
Best Poster Paper Award:
1. The poster paper entitled “Field Emission From Diamond Like Carbon Films Grown By RF PECVD Technique by Using Various Hydrocarbons” by O. S. Panwar, Sushil Kumar, S. S. Rajput, Rajnish Sharma & R.Bhattacharyya, presented in 10th Int. Workshop on “Physics of Semiconductor Devices” held at I.I.T. Delhi from Dec. 14 – 18, 1999 has been adjudged the best poster paper. IEEE (India) and MTT chapter has also given a cash prize of Rs 1000/-.
2. The poster paper entitled "Photothermal Deflection Spectroscopy and Space Charge Limited Conduction Studies in Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source’’ by D. Sarangi, O. S. Panwar and R. Bhattacharyya, presented in 9th Int. Workshop on `Physics of Semiconductor Devices,' held at Jamia Millia Islamia, Jamia Nagar, New Delhi from Dec. 16-20, 1997 has been adjudged the best poster paper on 17th December 1997.
Invited talks
1. “Photothermal Deflection Spectroscopy (PDS),A Tool to Study Optical Absorption in Silicon and Polymer Multilayered Thin Films for Solar Cell Applications” by Sreekumar Chockalingam and O. S. Panwar, Invited Talk (IL-40) in “ 3rd Int. Multicomponent Polymer Conference (IMPC)”, held at Institute of Macromolecular Science and Engineering (IMSE), Kottayam, Kerala (India) from March 23-25, 2012, p. 37
2. “Tetrahedral Amorphous Carbon and Amorphous Carbon Films with Embedded Nanoparticles Deposited by Filtered Cathodic Vacuum Arc Technique” by O. S. Panwar, MRSI Medal Lecture in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal (M.P.) from Feb.14-16, 2011.
3. “Novel Filtered Cathodic Vacuum Arc Technique for the Deposition of Tetrahedral Amorphous Carbon Films” by O. S. Panwar, Invited Inaugural lecture as Chief Guest in the Annual function of the Department of Chemistry, Daulat Ram College, University of Delhi, Delhi, 7th Dec. 2009.
4. "Different Approaches to Realize Stress Relieved Films of Diamond- Like Carbon" by Sushil Kumar, D. Sarangi, P.N. Dixit, O. S. Panwar, C. Anandan and R. Bhattacharyya, Invited talk in National Conference on `Science and Technology of Surfaces and Interfaces' held at I. I. T. Kharagpur from Dec., 16-18, 1996.
5. "Polysilicon TFTs Manufactured From Material Recrystallised at Low-Temperature" by B.M. Armstrong, H.S. Gamble, N.S.J. Mitchell, O. S. Panwar and R.A. Moore, Invited Oral paper in Workshop on `Polysilicon Thin-Film Transistors and Related Material Aspects for Large Area Microelectonics' , Cambridge (U.K.) 1989.
6. "Growth of Hydrogenated Amorphous Silicon Films In Cascaded Glow Discharge Reactors Systems - A Review" by P.N. Dixit, O. S. Panwar, R. Bhattacharyya and V.V. Shah, Invited talk in V Nat. Seminar on `Physics of Semiconductors and Devices', held at Dept. of Physics and Electronics Engineering, B.H.U. Varanasi from Dec.5-7, 1985.
Teaching Experience:
2 years (One year demonstration to Engineering undergraduates at Trinity College, Dublin-2, Ireland in
in 1987-88 and one year demonstration in M. Sc. Hons lab at Panjab University, Chandigarh in 1975).
Membership of Professional Societies
1. Materials Research Society of India-Life member
2. Semiconductor Society of India- Life member
3. Solar Energy Society of India- Life member
4. Society of Scientific Values (Ethics in Scientific Research, Development & Management)-Nominated Member
5. American Nano Society- Nominated Member
Worked or Working as:
1. External member of “Research Council (RC) of R&D Centre at Central Electronic Limited (CEL), Sahibabad, (U.P.)” from 1st July 2012 to 31st March 2015.
2. Acted as Core member in the Assessment Committee of Scientists Group IV (4) in RAB of CSIR. In 2011.
3. Chairman, Project Advisory Committee (PAC) of Department of Science and Technology (Govt of India) to The Energy Research Institute (TERI), New Delhi since Dec., 2010.
4. Member of Board of Studies in Physics at Harcourt Butler Technological Institute (H.B.T.I.), Kanpur (U.P) from 2009 -2011.
5. Member of Board in setting CSIR/UGC NET paper and evaluating answer sheets since 2005-2011.
6. Referee in several International journals (Diamond Relat. Mater., SOLMAT, Vacuum, Appl. Surf. Sci, Mater. Chem. Phys., ICMCTF, Crystal Research Technol., Surf. Sci. Coat. Thin Solid Films, Mater. Res. Bull.)
Ph.D. produced: One (Mohd. Alim Khan)
Title: “Study of pure and doped tetrahedral amorphous semiconductor deposited by a novel filtered cathodic
vacuum arc technique “ (Jamia Millia Islamia, New Delhi (Central University) Nov. 2005 (Awarded in
July 2006).
M. Phil. dissertation: One (Raju)
Title: “Deposition and characterization of amorphous carbon film by modified vacuum arc technique”
(Bundelkhand University, Jhansi, Sept., 2008)
M. Tech. dissertation: ONE (Ankur Gupta)
(i) Title: “A novel filtered vacuum arc technique for the deposition of thin films” (Amity Institute of
Nanotechnology, Amity University, Noida, UP, July 2009).
(ii)Title: “ Field Emission from amorphous Carbon Thin Film Having Embedded nanaoparticles” ( Delhi
Technological University, Formerly Delhi College of Engineering, Dhahbad, Delhi-110042, July
2011). (Prabhakar Singh)
Supervising
(i) Mr. R. K. Tripathi for Ph.D. w.e.f. 19th June, 2011 ( JRF- MNRE). He was working as PA w.e.f. 23 Nov. 2009.
(ii) Mr. Ajay Kesarvani for Ph.D. w.e.f. 19th July, 2010 ( SRF, CSIR).
(iii) Mr. Atul Bisht for Ph.D. w.e.f. from 20th July, 2010(SRF, UGC)
(iv) Mr Kamlesh Patel, Sc C trying for the registration for Ph.D.
Research Publications:
List attached [181 papers (59 in SCI Int. Journals, 9 in SCI Nat. journal, 8 in Non SCI Nat. journal, 41 in edited books, 23 in Int. Conf., 33 in Nat. Conf., 6 Invited talks, 2 Best poster paper)], one patent, l1 N.P.L. research report and 2 in NPL Samiksha in Hindi (Total =195)
Total available citations ~ 486 on 26-2-2013 and “h index” factor = 11 (ELEVEN)
Past Occupation
1. Preparation, characterization and measurement of pure and doped chalcogenide glasses.
2. Photocontraction effects in chalcogenide thin films.
3. Amorphous silicon films prepared by RF magnetron sputtering technique.
4. Low-temperature crystallization of LPCVD and APCVD amorphous silicon films to produce large grain size and fabrication of high performance Thin Film Transistors (TFTs).
5. Preparation, characterization and measurement of stress relieved hydrogenated amorphous carbon (diamond like carbon) films by R.F. self bias, VHF PECVD, Pulsed PECVD, Saddle field fast atom beam (FAB) source, microwave and other techniques.
6. Research and development work related to the materials and devices of hydrogenated amorphous silicon and its alloys like a-SiGe: H and a-SiC: H for solar cells and fully integrated panels and other devices.
7. Hydrogenated amorphous silicon films grown at high rate (18 Aº/sec)for X-ray and neutron detectors, optically addressed spatial light modulators (OASLM), Xerography etc.
8. Field emission in carbon based thin films.
9. Exploration of Plasmonics in amorphous/microcrystalline silicon solar cells
10 Hydrogenated amorphous silicon films grown at high rates at VHF and Amorphous and microcrystalline thin film silicon solar cells.
Present occupation:
1. Synthesis of high quality graphene by filtered cathodic vacuum arc (FCVA) and microwave PECVD techniques and its characterization and utilization in solar cells as transparent conductor, fuel cells, lithium ion batteries, super capacitors and sensors etc.
2. Amorphous carbon thin films having nanoparticle inclusions by the modified cathodic arc based techniques
like cathodic jet carbon arc (CJCA) and anodic jet carbon arc (AJCA) techniques.
3. Preparation, characterization and measurements of undoped and doped tetrahedral amorphous carbon( ta-C ) films deposited by filtered cathodic vacuum arc (FCVA) technique
4. Field-emission in DLC/ta-C / a-C films having embedded nanoparticles and in nanoclustered, nanocomposite, nano tubes.
5. Metal and silicon incorporated diamond like carbon films having reduced stress for automobile parts.
6. Undoped and doped amorphous/microcrystalline silicon films and alloys deposited by FCVA technique
without the use of toxic and hazardous gases like SIH4, PH3, B2H6 for solar cells .
7. R & D on Thin Film Solar Cell (a-Si, CIGS / CdTe) and HIT solar cells.
Participated in the Project completed / ongoing
|
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. |
Investigations on hydrogenated
amorphous Silicon films for solar cells
and integrated Panels (Ist phase) Investigations on hydrogenated amorphous Silicon films for solar cells
and integrated panels (2nd phase) Design and fabrication of large
area multi chamber PECVD reactor for
a-Si:H applications ( in collaboration
with ASSPP & BHEL Gwalphari) (3rd phase) Design and fabrication of
plasma CVD based system for deposition of
diamond like carbon (DLC) films on germanium substrates Development of a
semiconduncting processing equipment (Multizone PECVD
Based ) system for CEERI Investigations aimed at
producing stress relieved diamond like carbon films (a-C
and a-C: H) of high IR transmission/high photoconductivity and luminous efficiency Thick P-I-N hydrogenated
amorphous silicon Layers for OASLM and Radiation
detectors (in collaboration with Display
group of NPL and I.I.T. Kanpur) High performance Me-DLC
coatings by reactive DC magnetron sputtering Tetrahedral
amorphous carbon (ta-C) films deposited
by filtered vacuum arc discharge (FVAD)
technique Plasma
assisted deposition of hydrogenated silicon
films at high rates at VHF frequencies (CW
and pulsed) High
rate deposition of microcrystalline silicon films
using microwave plasma and its application
to efficient large area thin film solar cells Amorphous
carbon thin films having nanoparticle
inclusions deposited by the modified
vacuum plasma arc based techniques Supra Institutional project on
R&D on Photovoltaic and other Energy
Applications Technology for Assessment and
Refurbishment of Engineering Materials and
Components R & D on Thin Film Solar
Cell (a-Si, CIGS) Synthesis of high quality
graphene and its ionDe applications |
Member Member Member Member Member Co-PI Member P.I. P.I Member Member PI Member Member Member Co-PI |
DNES /MNES DNES/ MNES MNES IRDE CEERI, Pilani DST DST+ BRNS+ IRDE NPL DST DST DST DST CSIR CSIR Network MNRE DRDO |
37.6 27.0 45.7 23.587 2.5 23.303 13.0 2.0 28.198 38.63 (60.53) 38.867 (59.57) 34.945 1500 (70 for thin film cell) ~53 4906.6 1457.05 |
1-10-84 1-11-88 29-9-91 9-4-91 1-1-93 21-1-97 1-4-02 1-6-99 29-9-99 8-11-02 25-1-06 16-1-08 1-4-07 22-2-08 15-6-11 (Project submitted on 26-7-12 |
30-9-87 31-10-91 28-9-94 8-8-93 30-6-95 20-1-01 31-3-07 31-5-01 28-12-03 7-11-06 24-1-10 15-7-11 31-3-12 31-3-12 14-6-15 |
List of Publications of Dr. O .S. PANWAR (with citation index and Impact factor)
(A) Papers in International Journals
1. “Investigation of microstructural and nano-mechanical properties of nanostructured diamond like carbon thin films” by Saurabh Dayal, Sushil Kumar, Neeraj Dwivedi, Sreekumar Chockalingam, C. M. S. Rauthan, O. S.
Panwar, Metals and Materials International (In Press 2013) (Impact factor =1.183).
2. “Effect of Metallic Interfacial Layers on the Properties of Diamond-Like Carbon Thin Film” by Neeraj Dwivedi, Sushil Kumar, Sreekumar C, Saurabh Dayal, C. M. S. Rauthan, O. S. Panwar, Metals and Materials International 2(2012) 231-236 (Impact factor = 1.183).
3. ”Effect of substrate bias in hydrogenated amorphous carbon films having embedded nanocrystallites
deposited by cathodic jet carbon arc technique” by O. S. Panwar, Ishpal, R. K. Tripathi, A. K. Srivastava,
Mahesh Kumar, Sushil Kumar, Diamond Relat. Mater. 25 (2012) 63-72.(Impact factor=1.913)
( doi:10.1016/j. diamond.2012.02.010).
4. “Effect of Substrate Bias in Nitrogen Incorporated Amorphous Carbon Films with Embedded Nanoparticles Deposited by Filtered Cathodic Jet Carbon Arc Technique ” by O. S. Panwar, Sushil Kumar, Ishpal, A. K.
Srivastava, Abhilasha Chouksey, R. K. Tripathi, A. Basu, Mater. Chem. Phys. 132(2-3)(2012)659-666.
(Impact factor = 2.234).(Times Cited =ONE).
5. “Investigation of Properties of Cu Containing DLC films produced by PECVD process” Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, Sreekumar C., Saurabh Dayal, C. M. S. Rauthan, O. S. Panwar, J. Phys. Chem. Solids 73(2) (2012) 308-16 (Impact factor = 1.632) (Times Cited =TWO).
6. “Field emission, morphological and mechanical properties of variety of diamond- like carbon thin films”, Neeraj Dwivedi, Sushil Kumar, R. K. Tripathi, Hitendra K. Malik, O. S. Panwar, Appl. Phys. A: Materials Science and Processing 105(2) (2011) 417-425 (Impact factor = 1.630) (Times Cited =FOUR).
7. “Influence of Bonding Environment on Nano-mechanical properties of nitrogen containing hydrogenated
amorphous carbon thin films, Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, C. M. S. Rauthan and O. S.
Panwar, Mater. Chem. Phys. 130(1-2) (2011) 775-785 (Impact factor = 2.234) (Times Cited=THREE)
(doi:10.1016/j.matchemphys.2011.07.060).
8. “Effect of Substrate bias in Amorphous Carbon Films Having Embedded Nanocrystallites ” by Ishpal, O. S.
Panwar, A. K. Srivastava, Sushil Kumar, R. K. Tripathi, Mahesh Kumar, Sandeep Singh, Surf. Coat.
Technol 206 (2011)155-164. (Impact factor = 1.867) (Times Cited =ONE).
9. “Correlation of sp3 and sp2 Fraction of Carbon with Electrical, Optical and Nano-mechanical Properties of
Argon-diluted Diamond-Like Carbon Films ” by Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, Govind, C.
M. S. Rauthan, O. S. Panwar, Appl. Surf Sci. 257(15) (2011) 6804-6810 (Impact factor = 2.103). (Times
Cited =ELEVEN) (doi:10.1016/j.apsusc.2011.02.134).
10. “Determination of Density-of-States of Nanocluster Carbon Thin Films MIS Structure Using Capacitance-
Voltage Technique” by Shounak De, Jhuma Gope, B. S. Satyanaryana, O. S. Panwar, Mohan Rao, Modern
Physics Letters B 25 (2011) 763-772 (Impact factor = 0.474) (Times Cited =ONE).
11. “Role of Metallic Ni-Cr Dots on the Adhesion, Electrical, Optical and Mechanical Properties of Diamond-
Like Carbon Thin Films” by Neeraj Dwivedi, Sushil Kumar , C.M.S. Rauthan, O. S. Panwar, Plasma
Processes and Polymers 8(2) (2011) 100-107 (Impact factor = 2.468) (Times Cited=FIFTEEN).
12. “Nano Indenentation Measurements on Nitrogen Incorporated Diamond-Like Carbon Coatings” by Neeraj
Dwivedi, Sushil Kumar, C. M. S. Rauthan, O. S. Panwar, Appl. Phys. A 102(1) (2011) 225-230 (Impact
factor = 1.630) (Times Cited=FOURTEEN).
13. “Effect of Ambient Gaseous Environment on the Properties of Amorphous Carbon Thin Films” by Ishpal, O.
S. Panwar, Mahesh Kumar, Sushil Kumar, Mater. Chem. Phys.125 (2011) 558-567 (Impact factor = 2.234) (Times Cited = FOUR).
14. “Studies of Nanostructured Copper/Hydrogenated Amorphous Carbon Multilayer Films” by Neeraj Dwivedi, Sushil Kumar, Ishpal, Saurabh Dayal, Govind, C.M.S. Rauthan, O. S. Panwar, J. Alloys and Compounds 509(4) (2011)1285-1293 (Impact Factor = 2.289) (Times Cited=FOURTEEN).
15. "Role of Sandwich Cu Layer and Effect of Self Bias on Nano-mechanical Properties of Copper/Diamond-Like Carbon Bilayer Films," by Neeraj Dwivedi, Sushil Kumar, Hitendra K. Malik, C. M. S. Rauthan and O. S. Panwar, ISRN Nanotechnology 2011 (2011) 846187/1-7 pages. (Impact factor = --) (Times Cited = TWO).
16. “Studies of Nanostructured Copper/Hydrogenated Amorphous Carbon Multilayer Grown in Low Base Vacuum
System” by Neeraj Dwivedi, Sushil Kumar, Ishpal, Saurabh Dayal, Govind, C.M.S. Rauthan, O. S. Panwar, J.
Alloys and Compounds 509 (2011)1285-1293 (Impact Factor = 2.289) (Times Cited =FOURTEEN).
17. “Effect of High substrate Bias and Hydrogen and Nitrogen Incorporation on the Spectroscopic Ellipsometric
and Atomic Force Microscopic studies of Tetrahedral Amorphous Carbon films” by O. S. Panwar, Mohd
Alim Khan, Satyendra Kumar, A. Basu, B. R. Mehta, Sushil Kumar, Ishpal, Surf. Coat. Technol. 205 (2010)
2126-2133 (Impact Factor = 1.867) (Times Cited =SEVEN).
18. “X-ray photoelectron spectroscopy of Nitrogen Incorporated Amorphous Carbon Films Embedded with Nano
particles Deposited Using Filtered Cathodic Jet Carbon Arc Technique” by Ishpal, O. S. Panwar, Mahesh
Kumar , Sushil Kumar, Appl. Surf. Sci. 256 (2010) 7371-7376 (Impact factor = 2.103) (Times Cited
=THREE).
19. “Mechanical Properties of Nanostructured Copper/Hydrogenated Amorphous carbon Multilayer Films Grown
in a Low base vacuum System” by Neeraj Dwivedi, Sushil Kumar, Davinder Kaur, C. M. S. Rauthan and
O. S. Panwar, Optoelectronics and Advanced Materials- Rapid Communication 4 (2010) 604-609
(Impact factor = 0.457) (Times Cited =ONE).
20. “Effect of High substrate Bias and Hydrogen and Nitrogen Incorporation on Density of States and Emission
threshold in Tetrahedral Amorphous Carbon films” by O. S. Panwar, Mohd Alim Khan, R. Bhattacharyya, B. R. Mehta, Sushil Kumar and Ishpal, B.S. Satyanarayana, J. Vac. Sci. Technol. B 28 (2010) 411-422 (Impact
factor = 1.341) (Times Cited =FIVE).
21. “Properties of Boron and Phosphorous Incorporated Tetrahedral amorphous Carbon Films Grown Using
Filtered cathodic vacuum Arc process” by O. S. Panwar, Mohd. Alim Khan, B. S. Satyanarayana, Sushil
Kumar, Ishpal, Appl. Surf. Sci. 256 (2010) 4383-4390 (Impact factor = 2.103) (Times Cited =FOUR).
22. “Properties of Nitrogen Diluted Hydrogenated Amorphous Carbon (n-type a-C: H) Films and their
Characterization in n-type a-C: H /p-type Crystalline Silicon Heterojunctions Diodes” by Sushil Kumar, Neeraj
Dwivedi, C.M.S. Rauthan and O. S. Panwar, Vacuum 84(2010) 882-889 (Impact factor= 1.317) (Times
Cited =THIRTEEN).
23. “Amorphous and Nanocrystalline Silicon Made by Varying Deposition Pressure in PECVD Process” by Jhuma
Gope, Sushil Kumar, A. Parashar, P.N. Dixit, C.M.S. Rauthan, O. S. Panwar, D.N. Patel and S.C. Agarwal,
J. Non- Cryst. Solids 355 (2009) 2228-2232 (Impact factor= 1.537) (Times Cited =THREE).
24. “Photoluminescence and electrical conductivity of silicon containing multilayer structures of diamond like
carbon” by Neeraj Dwivedi, Sushil Kumar, C.M.S. Rauthan, O. S. Panwar and P.K. Siwach, J. Opto
electronics and Advanced Materials 11(2009)1618-1626 (Impact factor = 0.457) (Times Cited =TWO)
25. “Characterization of Boron and Phosphorous Incorporated Tetrahedral Amorphous Carbon Films Deposited
by the Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, Mahesh Kumar, S.M.
Shivaprasad, B.S. Satyanarayana, P.N. Dixit and R. Bhattacharyya, Jap. J. Appl. Phys. 48(6) (2009) 65501-
65508. (Impact factor=1.058) (Times Cited = THREE).
26. “Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon / silicon
heterojunctions grown using a pulsed filtered cathodic vacuum arc technique” by O. S. Panwar, Nalin
Rupesinghe and G.A.J. Amaratunga, J. Vac. Sci. Technol. B 26 (2008) 566-575 (Impact factor=1.341)
(Times Cited = FOUR).
27. “Effect of high substrate bias and hydrogen and nitrogen incorporation on filtered cathodic vacuum arc
deposited tetrahedral amorphous carbon films” by O. S. Panwar, Mohd. Alim Khan, Mahesh Kumar, S.M.
Shivaprasad, B.S. Satyanarayana, P.N. Dixit, R. Bhattacharyya and M. Y. Khan, Thin Solid Films 516
(2008)2331-2340 (Impact factor=1.89) (Times Cited= SIXTEEN).
28. “ Reflectance and Photoluminescence Study of As grown and Hydrogen and Nitrogen Incorporated
Tetrahedral Amorphous Carbon Films Deposited Using an S Bend Filtered Cathodic Vacuum Arc Process”
by O. S. Panwar, Mohd. Alim Khan, B. Bhattacharjee, A. K. Pal, B.S. Satyanarayana, P.N. Dixit, R.
Bhattacharyya and M.Y. Khan, Thin Solid Films 515(2006)1597-1606 (Impact factor = 1.89) (Times
Cited= SEVEN).
29. “Characterization of As grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited
by Pulsed Unfiltered Cathodic Vacuum Arc Process” by O. S. Panwar, B. Deb, B.S. Satyanarayana, Mohd.
Alim Khan, R. Bhattacharyya and A.K. Pal, Thin Solid Films 472 (2005) 180-188 (Impact factor=1.89)
(Times Cited= TEN).
30. “Space Charge Limited Conduction and Electron Paramagnetic Resonance Studies of As grown and Nitrogen
Incorporated Tetrahedral Amorphous Carbon Films Deposited by Pulsed Unfiltered Cathodic Vacuum Arc
Process” by O. S. Panwar, S. K. Gupta, Mohd. Alim Khan, B. S. Satyanarayana and R. Bhattacharyya,
Diamond Rel. Mater. 13(2004) 513-520 (Impact factor = 1.913) (Times Cited=FOUR).
31. “XPS and XAES Studies of As grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films
Deposited by Pulsed Unfiltered Cathodic Vacuum Arc Process” by O. S. Panwar, Y. Aparna, S.M.
Shivaprasad, Mohd. Alim Khan, B.S. Satyanarayana and R. Bhattacharyya, Appl. Surf . Sci. 221 (2004) 392-
401. (Impact factor=2.103) (Times Cited= TEN).
32 “Dependence of Field Emission Threshold in Diamond Like Carbon Films Grown by Various Techniques”
by O. S. Panwar, Sushil Kumar, S.S. Rajput, Rajnish Sharma and R.Bhattacharyya, Vacuum 72 (2004)
183-192 (Impact factor=1.317) (Times Cited= TWELVE).
33. “Effect of Substrate Bias on SE, XPS and XAES Studies of Diamond Like Carbon Films Deposited by
Saddle Field Fast Atom Beam Source” by Rajnish Sharma, O. S. Panwar, Sushil Kumar, D. Sarangi, A
. Goullet, P.N. Dixit and R. Bhattacharyya, Appl. Surf. Sci. 220 (2003)313- 320 (Impact factor=2.103)
(Times Cited= FIVE).
34. "Electron Field Emission from Diamond Like Carbon Films Grown by a Saddle Field Fast Atom Beam
Source" by O. S. Panwar, Rajnish Sharma, Sushil Kumar and P. N. Dixit, J. Vac. Sci. Technol. B 21
(2003) 1986-1995 (Impact factor=1.341) (Times Cited=SEVEN).
35. “Correlation of Residual Stress with Optical Absorption Edge in Diamond Like Carbon Films by Sushil
Kumar, P.N.Dixit, O. S. Panwar and R. Bhattacharyya, Diamond Relat. Mater. 12 (2003) 1576-1583.
(Impact factor=1.915) (Times Cited= ELEVEN).
36. “Characterization of Saddle Field Fast Atom Beam Source and its Application to the Growth of Diamond
Like Carbon Films” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya, Vacuum 58
(2000) 609-627 (Impact factor=1.317) (Times Cited= EIGHT).
37. “Characterization Studies of Diamond Like Carbon Films Grown Using Saddle Field Fast Atom beam
Source” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya , J. Vac. Sci. Technol. A
18(2000) 2302-2311 (Impact factor=1.253) (Times Cited=ELEVEN).
38. “Effect of Annealing on the Electrical, Optical and Structural properties of Hydrogenated Amorphous
Silicon Films Deposited in an Asymmetric R.F. Plasma CVD System at Room Temperature" by O. S.
Panwar, C. Mukherjee and R. Bhattacharyya, Solar Energy Materials and Solar Cells 57(1999)
373-391(Impact factor=4.542) (Times Cited=ELEVEN).
39. "Diamond-Like Carbon films with Extremely Low Stress” by Sushil Kumar, D Sarangi, P.N. Dixit, O. S.
Panwar and R. Bhattacharyya, Thin Solid Films 346 (1999) 130-137 (Impact factor=1.890) (Times
Cited=SIXTEEN).
40. "Enhanced Fast Atom Beam Deposition Grows DLC", D. Sarangi, O. S. Panwar, Sushil Kumar, P.N.
Dixit and R. Bhattacharyya, Advanced Coatings and Surface Technology Alert, July 24,1998 (John
Wiley and Sons, Inc., New York 10158).
41. "Filtered Saddle Field Fast Atom Beam Deposition of Diamond Like Carbon Films" by D. Sarangi, O. S.
Panwar, Sushil Kumar, P.N.Dixit and R. Bhattacharyya, J. Vac. Sci. Technol. A 16 (l998) 203-206.
(Impact factor=1.253) (Times Cited=ELEVEN).
42. "Diamond Like Carbon Films Formed by a Filtered Saddle Field Fast Atom Beam Source" by D. Sarangi, O. S. Panwar, Sushil Kumar, P.N. Dixit and R. Bhattacharyya, Surface and Coatings Technol.94-95(1997)
356-361 (Impact factor=1.867) (Times Cited= SIX).
43. “Diamond Like Carbon Films Grown Using a Saddle Field Fast Atom Beam Source" by O. S. Panwar, D.
Sarangi, Sushil Kumar, P.N. Dixit and R. Bhattacharyya, J. Vac. Sci. Technol. A 13 (1995) 2519-2524.
(Impact factor=1.253) (Times Cited=NINETEEN).
44. "Investigations on Hydrogenated Amorphous Silicon Films Grown at High Rate in a UHV CVD System" by
P.N. Dixit, O. S. Panwar, B.S. Satyanarayana and R. Bhattacharyya, Solar Energy Materials and
Solar Cells 37 (1995) 143-157 (Impact factor=4.542) (Times Cited=THREE).
45. "Infrared Studies of Hydrogenated Amorphous Carbon (a-C: H) Film and the Effect of Argon Plasma
Treatment" by P.N.Dixit, S.P. Verma, O. S. Panwar, Tanay Seth, D. Gupta and R. Bhattacharyya,
Infrared Phys. Technol. 35 (1994) 617-624 (Impact factor=1.296) (Times Cited = TEN).
46. "Comparative Study of Large Grains and High Performance TFTs in Low- Temperature Crystallized LPCVD
and APCVD Amorphous Silicon Films" by O. S. Panwar, R.A. Moore, S.H. Raza, H.S. Gamble and B.M.
Armstrong, Thin Solid Films 237 (1994) 255- 267(Impact factor = 1.890) (Times Cited = SIX)
47. “Effect of Power and Pressure on the Properties of Hydrogenated Amorphous Silicon Films Prepared by DC
Glow Discharge" by Tanay Seth, P.N. Dixit, O. S. Panwar and R. Bhattacharyya, Solar Energy Materials
and Solar Cells 31 (1993) 215-226(Impact factor=4.542) (Times Cited=FOUR).
48. "Studies of Subgap Absorption and Related Parameters by Constant Photocurrent Method of High Rate
Deposited Hydrogenated Amorphous Silicon Films' by Ajay Tyagi, O. S. Panwar, B. S. Satyanarayana,
P.N. Dixit, Tanay Seth, R. Bhattacharyya and V.V. Shah, Thin Solid Films 203 (1991) 251-257 (Impact
factor=1.890) (Times Cited=TWO).
49. "Electrical Properties of Boron Doped Hydrogenated Amorphous Silicon Films Prepared By Glow Discharge
Decomposition of Dilute Silane" by O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, B.S. Satyanarayana,
R. Bhattacharyya and V.V. Shah, Thin Solid Films 176 (1989)79-90 (Impact factor=1.890).
50. "Low -Temperature Crystallization of Amorphous Silicon Films for the Fabrication of Thin Film Transistors"
by O. S. Panwar, R.A. Moore, N.S.J. Mitchell, H.S. Gamble and B.M. Armstrong, Appl. Surf. Sci. 36 (1989)
247-256 (Impact factor= 2.103) (Times Cited=EIGHT).
51. "Hydrogenated Amorphous Silicon Films Prepared in Cascaded Glow Discharge Reactors" by O.S. Panwar,
P.N. Dixit, R. Bhattacharyya and V.V. Shah, J. Appl. Phys. 59(1986)1578-1586(Impact factor =2.168)
(Times Cited =FIVE).
52 "Light Induced Conductivity Changes in a-Si: H Films Prepared in Cascaded Glow Discharge Reactors” by
O.S. Panwar, P.N. Dixit, R. Bhattacharyya and V.V. Shah, Thin Solid Films 135(1986) 165-171 (Impact
factor=1.89) (Times Cited =ONE).
53. "Preparation and Properties of Hydrogenated Amorphous Silicon Films by Glow Discharge Decomposition
of Silane in Cascade Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V.V. Shah, Appl. Phys.
Lett. 4(1984) 991-993 (Impact factor=3.844) (Times Cited= SEVEN).
54. "Photocontraction Effect in Pure Chalcogen and Alloy Films" by O. S. Panwar and K.L. Chopra, J. Non-
Cryst. Solids, 51 (1982) 123-127 (Impact factor=1.537) (Times Cited =FOUR).
55. "Electrical and Dielectric Properties of As10Ge15Te75Agx Glasses" by O. S. Panwar, M. Radhakrishna,
K.K. Srivastava and K.N. Lakshminarayan, Phil. Mag. B 41 (1980) 253-271 (Impact factor=1.510)
(Times Cited=NINE).
56 "Electrical Properties of Silver Doped As10Ge15Te75 Glassy Alloy" by O. S. Panwar, M. Radhakrishna,
K.K. Srivastava and K.N. Lakshminarayan, J. Non - Cryst. Solids, 33 (1979) 411-416. (Impact factor
=1.537) (Times Cited=SEVEN).
57. "Dielectric Relaxation Study of Chalcogenide Glasses" by K.K. Srivastava, A. Kumar, O. S. Panwar and
K.N. Lakshminarayan, J. Non-Cryst. Solids 33 (1979) 205-224. (Impact factor=1.537) (Times Cited =
SIXTY SIX).
58. "Electrical Properties of Glassy Asx Ge10Te90-x Alloys" by O. S. Panwar, A. Kumar, D.R. Goyal, K.K.
Srivastava and K.N.Lakshminarayan, J. Non-Cryst. Solids 30 (1978) 37-44 (Impact factor=1.537)
(Times Cited= EIGHTEEN).
59. "Dielectric Properties of Glassy As10Te75Ge15", by K.K. Srivastava, D.R. Goyal, A. Kumar, K.N.
Lakshminarayan, O. S. Panwar and I. Krishan, Phys. Stat. Sol. A 41 (1977) 323-329 (Impact factor =
1.463) (Times Cited=TWENTY).
(B) Papers in National Journals
1. “Analysis of Dielectric Constants to Determine sp3/sp2 Ratio and Effect of Substrate Bias on Spectroscopic
ellipsometric Studies of Tetrahedral Amorphous Carbon films Grown Using an S bend Filtered Cathodic
Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, A. Basu, Satyendra Kumar and Sushil Kumar, Ind.
J. Pure and Appl. Phys. 47 (2009)141-148 (Impact factor=0.763)(Times Cited =ONE)
2. “Effect of hydrogen and nitrogen incorporation on the properties of tetrahedral amorphous carbon films
grown using an S bend filtered cathodic vacuum arc process” by O. S. Panwar, Mohd. Alim Khan, G.
Bhagavanarayana, P.N. Dixit, Sushil Kumar and C. M. S. Rauthan, Ind. J. Pure and Appl. Phys. 46(2008)
797-805 (Impact factor=0.34) (Times Cited=SIX)
3. “Plasma diagnostic studies of an S bend filtered cathodic vacuum arc system for the deposition of tetrahedral
amorphous carbon films” by O. S. Panwar, Mohd. Alim Khan, P.N. Dixit, B.S. Satyanarayana, R.
Bhattacharyya, Sushil Kumar and C. M. S. Rauthan, Ind. J. Pure and Appl. Phys. 46(2008)255-260 (Impact
factor=0.763) (Times Cited= FIVE)
4. “Custom Designed and Indigenously Developed FCVA System for Deposition of Tetrahedral Amorphous
Carbon (ta-C) Films at NPL” by O. S. Panwar, Mohd. Alim Khan, P. N. Dixit, R. Bhattacharyya and B.S.
Satyanarayana, C.S.I.R. News Vol. 56, No.9 (15th May 2006) p.129-130.
5. “Field Emission in Diamond Like Carbon Films Grown by Various Techniques”by O. S. Panwar, Sushil
Kumar, S.S.Rajput, Rajnish Sharma and R.Bhattacharyya,, Ind. J. Pure and Appl. Phys. 41(2003)175-182
(Impact factor=0.763) (Times Cited=ONE)
6. "High Rate Growth of Amorphous Hydrogenated Silicon Films and Their Applications" by Tanay Seth, C.
Mukherjee, C. Anandan, P.N. Dixit, O. S. Panwar, S.S. Bawa and R. Bhattacharyya, IETE Journal of
Research, 43 (l997)131-142 (Impact factor=0.20)
7. "Evaluation of the Ratio of (C-sp3 / C-sp2) in Hydrogenated Amorphous Carbon (a-C:H) from Analysis of
Dielectric Constants" by B.S. Verma, A. Basu, O. S. Panwar, P.N. Dixit, D.Sarangi, M. Kar and R.
Bhattacharyya, NPL Technical Bulletin, July 94. p. 8-16.
8. "Effect of Hydrogen Dilution During P-Layer Growth on Solar Cell Characteristics of Narrow Gap
Amorphous Silicon P-I-N Solar Cells" by P. N. Dixit, O. S. Panwar, B. S. Satyanarayana, Tanay Seth, R.
Bhattacharyya and V.V. Shah, J. Solar Energy Society of India, 3 (1993) 99- 104.
9. "Comparative Study of High Rate Deposited Amorphous Silicon Films Prepared Under RF and DC Glow
Discharge" by Tanay Seth, P.N. Dixit, O. S. Panwar and R. Bhattacharyya, Indian J. Pure and Applied
Phys., 31 (1993) 315-318 (Impact factor=0.763) (Times Cited=ONE)
10. "Optical Emission Spectroscopic Studies of Glow Discharge Decomposition of Silane in Cascaded
Reactors" by P.N. Dixit, O. S. Panwar, R. Bhattacharyya and V.V. Shah, Indian J. Pure and Appl. Phys.
30 (1992) 335-339 (Impact factor=0.763) (Times Cited=TWO)
11. "Hydrogen Evolution and Spectroscopic Ellipsometry of Hydrogenated Amorphous Silicon Films Grown
in Cascaded Glow Discharge Reactors" by B.S. Satyanarayana, O. S. Panwar, P.N. Dixit, Ajay Tyagi,
Tanay Seth, R. Bhattacharyya and V.V. Shah in Int. Conf. on `Semiconductor Materials' held at New
Delhi from 8-16 Dec. 1988; J. Semiconductor Materials and Devices, 1 (1989) 34-37.
12. "Hydrogenated Amorphous Silicon Thin Films and Devices" by P.N. Dixit, O. S. Panwar, B.S.
Satyanarayana, Ajay Tyagi, Tanay Seth, R. Bhattacharyya and V.V. Shah, N.P.L. Technical Bulletin,
July, 1989, p.1-18.
13. "Amorphous Semiconductor Devices: Memory and Switching Mechanism" by K.N. Lakshminarayan,
K.K. Srivastava, O. S. Panwar and A Kumar, J. Inst. Electronics and Telecom. Engrs., 27 (1981) 16-19.
(Impact Factor = 0.200)
14. "Photoconductivity of Amorphous As-Ge-Te Films" by S. Singh, O. S. Panwar, K.K. Srivastava and
K.N. Lakshminarayan, Nat. Acad. Sci. Lett., 3 (1980) 213-217 (Impact factor=0.211)
15. "RC Network Model for Amorphous Semiconductors" by M. Radhakrishna, O. S. Panwar, K.K.
Srivastava and K.N. Lakshminarayan, Nat. Acad. Sci. Lett., 1 (1978) 263-265. (Impact factor=0.211)
16. "Electrode Problems for Amorphous Semiconductor Devices" by O. S. Panwar, D.R. Goyal, A. Kumar,
D.R. Ravikar, K.K. Srivastava and K.N. Lakshminarayan, Nat. Acad. Sci. Lett., 1(1978) 227-228
(Impact factor=0.211) (Times Cited =FOUR)
17. "Conductivity and Switching Characteristics of Glassy Alloy As10 Ge 15 Te75” by D.R. Goyal, O. S.
Panwar K.K. Srivastava, K.N. Lakshminarayan, A. Kumar and D.R. Ravikar, Ind. J. Pure and Appl.
Phys., 15 (1977) 10-13 (Impact factor=0.763) (Times Cited =TEN)
C. Papers published in Books
1. “New Approaches for the Performance improvement of Heterojunction and HIT solar cells” by Kamlesh Patel, Sushil Kumar, O. S. Panwar, Sreekumar C., C.M.S. Rauthan, P. Tyagi, Poster paper presented in the Proc. Of 27th European Photovoltaic Solar Energy Conference (EU PVSEC) , held during 24-28 Sept. 2012, Frankfurt, Germany, 2648-2652, doi:10.4229/27th EUPVSEC 2012-13 DV.2.25.
2. “Hydrogenated Amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon
arc technique” by O.S. Panwar, Ishpal, R.K. Tripathi, Sushil Kumar, Proc. SPIE Vol. 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491M (October 15, 2012); doi:10.1117/12.924629
3. “Improvement in simulation results of heterojunction and HIT solar cells” by Kamlesh Patel, O.S. Panwar,
Atul Bisht, Sreekumar Chocklingham, Sushil Kumar, C.M.S. Rauthan, Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490E (October 15, 2012); doi:10.1117/12.927395 .
4. “ Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by
filtered anodic jet carbon arc technique “ by R.K. Tripathi, O.S. Panwar, Ajay Kesarwani, Sushil Kumar,
A, Basu, Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492F (October 15, 2012); doi:10.1117/12.927423.
5. “ Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application” by Neeraj
Dwivedi, Sushil Kumar, Saurabh Dayal, C.M.S. Rauthan, O. S. Panwar, H. K. Malik,Proc. SPIE Volume 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493A (October 15, 2012); doi:10.1117/12.925536.
6. “New Approaches for the Performance improvement of Heterojunction and HIT solar cells” by Kamlesh Patel, Sushil Kumar, O. S. Panwar, Sreekumar C., C.M.S. Rauthan, P. Tyagi, Poster paper presented in the Proc. Of 27th European Photovoltaic Solar Energy Conference (EU PVSEC) , held during 24-28 Sept. 2012, Frankfurt, Germany, 2648-2652, doi:10.4229/27th EUPVSEC 2012-13 DV.2.25.
7. “Properties of Pure and Nitrogen Doped Amorphous Carbon Films Having Nanoparticle Inclusions” by
O. S. Panwar, Sushil Kumar, Ishpal, A. K. Srivastava, P. K. Siwach, Abhilasha Chouksey, C. M. S. Rauthan
and S. Chockalingam, in “The Physics of Semiconductor Devices: Technical Digest”(Excel India
Publishers, New Delhi, 2009) p. 914-917.
8. “Electronic Properties of Hydrogenated Nano-crystalline Silicon Films Grown at Various Argon Dilutions
By PECVD Technique” by A. Parashar, Sushil Kumar, Jhuma Gope, C.M.S. Rauthan, S.A. Hashmi, O.
S. Panwar and P.N.Dixit, in “The Physics of Semiconductor Devices: Technical Digest”(Excel India
Publishers, New Delhi, 2009) p.1166-1168.
9. “RF Power Density Dependence Growth of Hydrogenated Silicon Films Using PECVD Technique” by
A. Parashar, Sushil Kumar, Jhuma Gope, C.M.S. Rauthan, P.N. Dixit, P.K. Siwach, O. S. Panwar and S. A.
Hashmi in “Technical Digest of 18th Photovoltaic Science and Engineering Conference and Exhibition
(PVSEC 18)”, held from Jan.19-23, 2009 at Science City Convention Chatterjee, Centre, Kolkata
(India), Eds: Swati Ray and Parsarthi Macmillan Publishers India Ltd., New Delhi, 2009) p. 213-214.
10. “Effect of Crystallinity on Photosensitivity and Stability of Amorphous and Nano crystalline Silicon Films”
by Jhuma Gope, Sushil kumar, A. Parashar, C.M.S. Rauthan, P.N. Dixit, P.K. Siwach, O. S. Panwar and
S.C. Agarwal in “Technical Digest of 18th Photovoltaic Science and Engineering Conference and
Exhibition (PVSEC 18)”, held from Jan.19-23, 2009 at Science City Convention Centre, Kolkata
(India), Eds: Swati Ray and Parsarthi Chatterjee, Macmillan Publishers India Ltd., New Delhi, 2009. p
243-244.
11. “Influence of Plasma Parameters on the Growth of Silicon Films” by Sushil kumar, A. Parashar, Jhuma
Gope, C.M.S. Rauthan, P.N. Dixit, P.K.Siwach and O. S. Panwar, in“Technical Digest of 18th
Photovoltaic Science and Engineering Conference and Exhibition (PVSEC 18)”, held from Jan.19-23,
2009 at Science City Convention Centre, Kolkata (India), Eds: Swati Ray and Parsarthi Chatterjee,
Macmillan Publishers India Ltd., New Delhi, 2009. p 283-284.
12. “Electron Field-Emission From Hydrogen Incorporated Tetrahedral Amorphous Carbon Films Grown Using
an S Bend Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, B.S. Satyanarayana,
P.N. Dixit, Sushil Kumar and M.Y. Khan in ‘The Physics of Semiconductor Devices’ edited by V. Kumar,
S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1646- 1649.
13. “Electron Field-Emission From As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon
Films Grown Using L Bend Pulsed Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, N. L.
Rupesinghe and G. A. J. Amaratunga in ‘The Physics of Semiconductor Devices’, edited by V. Kumar,
S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1642-1645.
14. “Study of Pure and Doped Tetrahedral Amorphous Carbon Films Deposited Using Filtered Cathodic
Vacuum Arc Process”by O. S. Panwar, Mohd. Alim Khan, P. N. Dixit, B. S. Satyanarayana, R.
Bhattacharyya and M. Husain in ‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K.
Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1621-1625.
15. “Effect of Boron Doping in Tetrahedral Amorphous Carbon Films Grown Using Filtered Cathodic Vacuum
Arc Process” by Mohd. Alim Khan, O. S. Panwar, P. N. Dixit, B.S. Satyanarayana, M. Dilshad, A.
Bhardwaj and M. Y. Khan in ‘The Physics of Semiconductor Devices’, edited by V. Kumar, S. K.
Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1617- 1620.
16. “Raman and Morphological Studies of Boron Incorporated Tetrahedral Amorphous Carbon Films Grown
Using Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, B.S. Satyanarayana, Mohd. Alim Khan,
Ram Kishore, K.N. Sood, P.N. Dixit and M.Y. Khan in‘The Physics of Semiconductor Devices’, edited by
V. Kumar, S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1556-
1559.
17. “Estimation of Defects in Hydrogenated Nanocrystalline Silicon Films Using Constant Photocurrent
Method” by M. Dilshad, A. Bhardwaj, O. S. Panwar, Sushil Kumar, C.M.S. Rauthan, S.S. Rajput and P.N.
Dixit in ‘The Physics of Semiconductor Devices’, Edited by V. Kumar, S. K. Agarwal and S.N. Singh
(Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1515-1518.
18. “Langmuir Probe Studies of the Filtered Cathodic Vacuum Arc Process for the Deposition of Tetrahedral
Amorphous Carbon Films” by Mohd. Alim Khan, O. S. Panwar, P. N. Dixit, R. Bhattacharyya, B. S.
Satyanarayana and M.Y. Khan in ‘The Physics of Semiconductor Devices’, edited by V. Kumar,
S. K. Agarwal and S.N. Singh (Allied Publishers Pvt. Ltd., New Delhi, 2005) p.1348-1352.
19 “Investigations on Tetrahedral Amorphous Carbon Films Grown Using An Indigenously Developed
Filtered Cathodic Vacuum Arc System” by O. S. Panwar, Mohd. Alim Khan, B.S. Satyanarayana, P.N.
Dixit, Sushil Kumar and R. Bhattacharyya in ‘Physics of Semiconductor Devices’, edited by K.N. Bhat
and A. D. Gupta (Narosa Publishing House, New Delhi, 2004) p.1148-1150.
20. “Disorder in Diamond Like Carbon Films” by Sushil Kumar, P.N. Dixit, O. S. Panwar and R.
Bhattacharyya in ‘Crystal Growth and Characterization ‘, edited by S.K. Gupta, S.K. Haldar and
G. Bhagavanarayana (National Physical Laboratory, New Delhi, India, 2001) p. 473-477.
21. “Effect of Nitrogen Dilution on the Mechanical Properties of Diamond Like Carbon Films Grown Using
Saddle Field Fast Atom Beam Source” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya
in “Physics of Semiconductor Devices” (Vol. 2), edited by V. Kumar and S K. Agarwal, (Allied Publishers
Limited, New Delhi, 2000) p.1404 –1407.
22. “Field Emission From Diamond Like Carbon Films Grown By RF PECVD Technique by Using Various
Hydrocarbons” by O. S. Panwar, Sushil Kumar, S.S. Rajput, Rajnish Sharma and R. Bhattacharyya in
“Physics of Semiconductor Devices” (Vol. 2), edited by V. Kumar and S. K. Agarwal, (Allied Publishers
Limited, New Delhi, 2000) p. 1400 – 1403.
23. “Applications of Hydrogenated Amorphous Carbon Films” by Rajnish Sharma, Sushil Kumar, Sudhir Kumar, O. S. Panwar, P.N. Dixit and R. Bhattacharyya in “Advances in Carbon Materials : Indian Scenario” Edited by O.P. Bahl and T.L.Dhami, (Shipra Publications, Delhi , 1999 ) p. 269 – 276.
24. "Diamond Like Carbon as an Optical Material for the Infrared Region" by Sushil Kumar, P.N. Dixit, D. Sarangi, O. S. Panwar, A. Basu, B.S. Verma and R. Bhattacharyya, in ‘Optics and Optoelectronis: Theory, Devices and Applications’, edited by O.P.Nijhawan, A.K.Gupta, A.K. Musla and Kehar Singh (Vol. 1) (Narosa Publication House, New Delhi, 1999) p. 552-556.
25. "Photothermal Deflection Spectroscopy and Space Charge Limited Conduction Studies in Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source) by D. Sarangi, O. S. Panwar and R. Bhattacharyya in `Physics of Semiconductor Devices,' edited by V. Kumar and S.K. Agarwal (Narosa Publishing House, New Delhi, l998) p 1251-1254.
26. "Infrared Absorption Study of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in an Asymmetric R.F. Plasma CVD System at Room Temperature" by O. S. Panwar and C. Mukherjee in `Physics of Semiconductor Devices', edited by V. Kumar and S.K. Agarwal (Narosa Publishing House, New Delhi, l998) p 648-651.
27. "Photothermal Deflection Spectroscopy Study of Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source" by D. Sarangi, O. S. Panwar, C. Mukherjee, Sushil Kumar and R. Bhattacharyya in `Thin Film Characterization and Applications' edited by Sa.K. Narayandass and D. Mangalaraj (Allied Publishers Limited, New Delhi, 1996) p. 314-318.
28. "Hydrogen Evolution and Surface Morphology of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in Asymmetric Plasma CVD System at Room Temperature" by O. S. Panwar, C. Mukherjee, Tanay Seth, P.N. Dixit and R. Bhattacharyya. In `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p.617-619.
29. "EPR Study of As-Deposited and Low-Temperature Crystallized LPCVD and APCVD Amorphous Silicon Films" by O. S. Panwar, T.J. Ennis, R.C. Barklie and R.A.Moore in `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p. 605-607.
30. "Analysis of Dielectric Constants to Determine sp3 / sp2 Ratio in Hydrogenated Amorphous Crabon
(a-C:H) Films” by B.S. Verma, A. Basu, O. S. Panwar, P.N. Dixit, D. Sarangi, M. Kar and R.
Bhattacharyya in `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New
Delhi, 1996) p.430-432. (Times Cited =ONE)
31. "Spectroscopic Ellipsometric Study of Diamond Like Films Using a Saddle Field Source" by O. S. Panwar, D. Sarangi, B.R. Mehta and R. Bhattacharyya. in `Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1996) p.424 - 426.
32. "Thermal Equilibrium Defect Processes in n-Type a-Si:H Under Illumination" by Sushil Kumar, P.N. Dixit, O. S. Panwar, Tanay Seth and R. Bhattacharyya in `Physics of Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1993) p.598-600.
33. "Metastabilities in Undoped a-Si 1-x Ge x: H Alloys by A. K. Sinha, P. Agarwal, S. Kumar, S.C. Agarwal, P.N. Dixit, O. S. Panwar, Tanay Seth and R. Bhattacharyya in `Physics of Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1993) p.595-597.
34. "Effect of In-situ Thermal Relaxation on Optoelectronic Properties of Hydrogenated Amorphous Silicon Film Prepared in a Multizone UHV Plasma CVD System" by O. S. Panwar, P.N. Dixit, B.S. Satyanarayana and R. Bhattachryya in `Physics of Semiconductor Devices' edited by Krishan Lal (Narosa Publishing House, New Delhi, 1993) p.583-585.
35. "Effect of Various Process Parameters on the Properties of Hydrogenated Amorphous Silicon Germanium films
Grown in a Multizone Plasma CVD Reactor" by O. S. Panwar, P.N. Dixit, and R. Bhattacharyya in Proc. VI
Int. “Photovoltaic Science and Engineering Conf.”, edited by B.K. Das and S.N. Singh (Oxford and IBH
Publishing Company Pvt. Ltd., New Delhi, 1992) p. 621-626.
36. "Role of P-layer Grown Using Different Source Gas Combinations for the Improvement of P-I-N Hydrogenated Amorphous Silicon Solar Cells" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V. V. Shah in Proc. VI Int. “Photovoltaic Science and Engineering Conf.”, edited by B.K. Das and S.N. Singh (Oxford and IBH Publishing Company Pvt. Ltd., New Delhi,(1992) p. 351-356.
37. "Effect of Carbon Grading and Buffer Layer at the P/I Interface on the Performance of P-I-N Amorphous Silicon Solar Cells" by P.N. Dixit, O. S. Panwar, B.S. Satyanarayan, Tanay Seth, R. Bhattacharyya and V.V. Shah in Proc. of 6th Int. “Photovoltaic Science and Engineering Conf.”, edited by B.K. Das and S.N. Singh (Oxford and IBH Publishing Company Pvt. Ltd., New Delhi, 1992) p.345-350.
38. "Spectroscopic Ellipsometry Analysis of Hydrogenated Amorphous Silicon Films in Cascaded Glow Discharge Reactors" by Ajay Tyagi, A. Basu, Nakul Parashar, O. S. Panwar, P.N.Dixit, R. Bhattacharyya and V.V. Shah in Proc. Int. Conf. on `Disordered Materials (Structure and Property)' edited by S.K. Mitra (India's publication, 1991) p.167-169.
39. "High Performance Thin Film Transistors in Low-Temperature Crystallized LPCVD and APCVD Amorphous Silicon Films" by O. S. Panwar in Suppl. Proc. of Vth Int. Workshop on `Physics of Semiconductor Devices', edited by W.S. Khokle and S.C. Jain, Mc Millan India Ltd. Delhi (1990) p.77-78.
40. "Comparative Study of Growth Morphology of a-Si:H Films Prepared In Cascaded Glow Discharge Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar, C. Anandan and V.V. Shah, in `Physics of Semiconductor and Devices', edited by J.C. Garg and P.C. Mathur (Puneet Press, Meerut, 1986) p 124-130.
41. "Investigations of a-Si:H Films Grown In Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R.Bhattacharyya and V.V. Shah in `Photovoltaic Material and Devices' edited by B.K. Das and S.N. Singh (Wiley Eastern Ltd.,1985, New Delhi) p. 227-237.
D. Papers published in International Conferences
1. “Studies of nano-mechanical properties of metal (copper and titanium) / diamond- like carbon bilayer thin films” by Neeraj Dwivedi, Sushil Kumar, H.K. Malik, C. M. S. Rauthan, O. S. Panwar, Abstract accepted as poster paper in “22nd European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides in Diamond 2011, held at Garmisch-Partenkirchen, Bavaria, Germany from 4-8 Sept., 2011.
2. “Hydrogenated Amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon
arc technique” by O.S. Panwar, Ishpal, R.K. Tripathi, Sushil Kumar, Oral presentation in “16th Int.
workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur, Kanpur (U.P.) from 19-22
Dec, 2011.
3. “Improvement in simulation results of heterojunction and HIT solar cells” by Kamlesh Patel, O.S. Panwar, Atul Bisht, Sreekumar Chocklingham, Sushil Kumar, C.M.S. Rauthan, Poster paper in “16th
Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur, Kanpur (U.P.) from
19-22 Dec, 2011.
4. “Filtered cathodic vacuum arc for the deposition of phosphorus doped amorphous/microcrystalline silicon
films for solar cells” by Ajay Kesarwani, O. S. Panwar, R.K. Tripathi, Atul Bisht, Sushil Kumar, Kamlesh
Patel, Poster paper in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T.
Kanpur, Kanpur (U.P.) from 19-22 Dec, 2011.
5. “Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by
filtered anodic jet carbon arc technique” by R.K. Tripathi, O.S. Panwar, Ajay Kesarwani, Sushil Kumar,
A,Basu, Poster paper in “16th Int. workshop on Physics of Semiconductors Devices”, held at I.I.T.
Kanpur, Kanpur (U.P.) from 19-22 Dec, 2011.
6. “ Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application” by Neeraj
Dwivedi, Sushil Kumar, Saurabh Dayal, C.M.S. Rauthan, O. S. Panwar, H. K. Malik, Poster paper in “16th
Int. workshop on Physics of Semiconductors Devices”, held at I.I.T. Kanpur,Kanpur (U.P.) from 19-22
Dec, 2011.
7. “A Comparative Study of Field Emission From Diverse Nanocarbon Based Electron Emitters and aPossible
Correlation With The Raman Response” by B.S. Satyanarayana, Niranjana S., Shounak De, R. Bhattacharyya
and O. S. Panwar, in “Proceeding of 9th Asian Symposium \ on Information Display, the ASID 06”, held
at New Delhi (India) from Oct. 8-12, 2006, p.448-451.
8 “Simulation Study of a New Amorphous Silicon Thin Film Transistor With Tetrahedral Amorphous Carbon As
Gate Dielectric” by B.S. Satyanarayana, Shounak De, R Bhattacharyya and O. S. Panwar, in “Proceeding of 9th Asian Symposium on Information Display, the ASID 06”, held at New Delhi (India) from Oct. 8-12, 2006, p.411.
9. “Diamond Like Carbon Films Grown by Saddle Field Fast Atom Beam Source at Different Substrate Biases”
by Rajnish Sharma, Sushil Kumar , P.N. Dixit, O. S. Panwar, Sudhir Kumar, C. M. S. Rauthan, K.M.K.
Srivatsa, P.J. George and R. Bhattacharyya,Oral Presentation in MRS Symp., held from 28th March- April
1st, 2005 at San Francisco, California, USA) (Ref. No.T1.3)
10. “ESR Study of Tetrahedral Amorphous Carbon Films Grown Using an Indigenously Developed Filtered
Cathodic vacuum Arc System” by S. K. Gupta, Manju Arora, O. S. Panwar, Mohd. Alim Khan, P.N. Dixit
and M. Hussain, Extended Abstract in Proc. Asia Pacific EPR / ESR Symposium 2004, held at I.I. Sc.
Bangalore from Nov. 22-25, 2004.
11. “ESR Study of Tetrahedral Amorphous Carbon Films Grown Using an Indigenously Developed
Filtered Catodic vacuum Arc System” by S. K. Gupta, Manju Arora, O. S. Panwar, Mohd. Alim
Khan, P.N. Dixit and M. Hussain, Extended Abstract in Proc. Asia Pacific EPR/ ESR Symposium
2004, held at I.I. Sc. Bangalore from Nov. 22-25, 2004.
12. “Field Emission from Tetrahedral Amorphous Carbon Films Grown using a Triggerless Pulsed Cathode Arc
Process” by B.S. Satyanarayana, O. S. Panwar and Mohd. Alim Khan in “ Proc of 16th Int. Micro
ElectronicsVacuum Conference (IMVC)”, held from July 7-11, 2003 at Osaka, Japan. (P1-44)
13. “Effect of Substrate Bias on SE, XPS and XAES Studies of Diamond Like Carbon Films Deposited by Saddle
Field Fast Atom Beam Source” by Rajnish Sharma, O. S. Panwar, Sushil Kumar, D. Sarangi, A. Goullet, P.N.
Dixit and R. Bhattacharyya, Extended Abstract in ‘Diamond 2002’ held at Granada, Spain from 8-13
Sept. 2002.
14. “Field Emission from Doped and Undoped Tetrahedral Amorphous Carbon Grown Using Direct and Pulsed
Cathode Arc Process” by B.S. Satyanarayana, O. S. Panwar and Shashank Sharma in “Proc of 15th Int.
Micro Eelectronics Vacuum Conference (IVMC)”, held from July 7-11, 2002 at Lyon, France.
15. "Study of Tetrahedral Amorphous Carbon films Grown Using Direct and Pulsed Source Cathodic Arc
System" by B.S. Satyanarayana, O. S. Panwar, Shashank Sharma, Sushil Kumar and R. Bhattacharyya,
Extended abstract accepted in XI workshop on Physics of Semiconductor Devices held at I.I.T. Delhi
from 11-15 Dec. 2001.
16. "Diamond Like Carbon Films Formed by a Filtered Fast Atom Beam Source" by D. Sarangi, O. S. Panwar,
Sushil Kumar, P.N. Dixit and R. Bhattacharyya, Oral Presentation in Int. Conf. on Metallurgical Coatings and Thin Films (ICMCTF-97) held on April 21-25, l997 at San Diego, California, USA) (Ref. No.B5.07).
17. "Diamond- Like Carbon Films with Extremely Low Stress" by Sushil Kumar, D. Sarangi, P.N. Dixit, O.S.
Panwar and R. Bhattacharyya, Oral presentation in Int. Conf. on Metallurgical Coatings and Thin Films
(ICMCTF-98) held on April 27- May l, l998 at San Diego, California, USA) Ref. No. D3-9.
18. "Hydrogenated Amorphous Silicon Film Grown by Glow-Discharge Hot Sheet CVD Technique" by P.N. Dixit, Sushil Kumar, C. Mukherjee, D. Sarangi, O. S. Panwar and R. Bhattacharyya in Proc.VIII Int. Workshop on `Physics of Semiconductor Devices' held at New Delhi from Dec., 11-16, 1995.
19. "Effect of Hydrogen Dilution on a-Si:H and Boron Doped a-SiC:H Films Grown in a Multizone Plasma CVD System" by B.S. Satyanarayana, P.N. Dixit, O. S. Panwar, Tanay Seth, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in IInd Int. Conf. on `Semiconductor Materials', New Delhi, Dec.14-19, 1992.
20. "Effect of Power and Pressure on the Properties of High Rate Deposited Hydrogenated Amorphous Silicon Films " by Tanay Seth, P.N. Dixit, B.S. Satyanarayana, O. S. Panwar, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in 20th Int. Conf. Of Physics of Semiconductors held at Thessaloniki, Greecefrom Aug. 6-10, 1990 (Extended Abstract)
21. "Low-Temperature Crystallization of Low-Pressure and Atmospheric Pressure Chemical Vapor Deposited Amorphous Silicon Films to Produce Large Grain Structure" by O. S. Panwar in Int. Conf. on `Semiconductor Materials' held at New Delhi from Dec. 8-16, 1988.
22. "Self Aligned Polysilicon Gate TFTs for Flat Panel Displays" by O. S. Panwar, N.S.J. Mitchell, S.H. Raza, J.H. Montgomery, H.S. Gamble, B.M. Armstrong and R.A. Moore in First Int. Conf. on `Microelectronics 88' held in Algiers, Nov. 1988.
23. "Low -Temperature Crystallization of Amorphous Silicon Films for the Fabrication of Thin Film Transistors" by O. S. Panwar, R.A. Moore, N.S.J. Mitchell, H.S. Gamble and B.M. Armstrong in Proc. European Material Research Society Conf. on `Photon, Beam and Plasma Assisted Processing Fundamentals and Device Technology' held at Strasbourg, France from May 31 - June 2, 1988.
E. Papers published in National Symposiums
1. “Formation and Properties of Amorphous Carbon Films Embedded with Nanoparticles Deposited by Filtered Anodic Jet Carbon Arc Technique” by O. S. Panwar, R. K. Tripathi, C. Sreekumar, A. K. Srivastava and Sushil Kumar, Poster paper in the 22nd Annual General Meeting of Materials Research Society of India (MRSI), held at Bhopal from Feb.14-16, 2011.
2. “Mechanical Properties of Hydrogen and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc Technique“ authored by O. S. Panwar, C. Sreekumar, R. K. Tripathi and Sushil Kumar, Poster paper in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal from Feb.14-16, 2011.
3. “Importance of Hydrogenated Amorphous Carbon Films for the Development of Solar Cells” by Neeraj Dwiedi, Sukhbir Singh, Saurabh Dayal, Sushil Kumar, H. K. Malik, O. S. Panwar, C.M.S. Rauthan, Abstract of the Poster Paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-20.
4. “Effect of Hydrogenated Amorphous Carbon as Antireflecting Coating Layer on Silicon Solar Cells” by Saurabh Dayal, Neeraj Dwiedi, Sushil Kumar, C. M. S. Rauthan, O. S. Panwar, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-21.
5. “Use of Carbon thin layer as a Protective Coating on Solar Cells” by R. K. Tripathi, O. S. Panwar, Ajay Kesarwani, Kamlesh Patel, Sushil Kumar, C.M.S. Rauthan, Sreekumar Chockalingam, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-22.
6. “Filtered Cathodic Vacuum Arc Technique for the Deposition of Amorphous Silicon Thin Films” by Ajay
Kesarwani, O. S. Panwar, R. K. Tripathi, Atul Bisht, Sushil Kumar, Kamlesh Patel, Sreekumar
Chockalingam, C. M. S. Rauthan, Abstract of the Poster paper in the Abstract booklet in Hindi in the
“National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”,
held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-24.
7. “Use of Plasmonics for Enhancing the Efficiency of Solar Cells” by Atul Bisht, O. S. Panwar, Ajay Kesarwani, Kamlesh Patel, Sushil Kumar, Sreekumar Chockalingam, C. M. S. Rauthan, Abstract of the Poster paper in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-25.
8. “Development of Heterojunction (HIT) Solar Cells With Intrinsic Thin Layer” by Kamlesh Patel, Sushil Kumar, C. M. S. Rauthan, O. S. Panwar, Abstract of the Poster paper in in the Abstract booklet in Hindi in the “National Symposium on Recent Advances in Materials and Devices for Solar Energy Applications”, held at National Physical Laboratory , New Delhi-110012 from 1-2 Sept., 2011. PP-26.
9. “Study of optical property of silver nanoparticle by nanosphere optics lab field simulator” by Atul Bisht , O.S. Panwar, Ajay Kesarwani, R. K. Tripathi, Kamlesh Patel, Sushil Kumar, Poster paper in the 23rd Annual General Meeting of Materials Research Society of India (MRSI) held at Patiala from Feb.13-15, 2012.
10. “Study of Phosphorus Doped Silicon Thin Film Grown by Filtered Cathodic Vacuum Arc Technique” by Ajay Kumar Kesarwani, O. S. Panwar, R. K. Tripathi, Atul Bisht, Sreekumar Chockalingam, Poster paper in TAPSUN National Conference on `Advances in Futuristic Solar Energy Technologies’, held at NPL, New Delhi from 4-5 Dec.2012. p.63.
11. “Phosphorus Doped Amorphous Silicon Carbide Film Deposited by Filtered Cathodic Vacuum Arc Technique” by R. K. Tripathi, O. S. Panwar, Ajay Kesarwani, Sreekumar Chockalingam, Poster paper in TAPSUN National Conference on `Advances in Futuristic Solar Energy Technologies’, held at NPL, New Delhi from 4-5 Dec.2012.p.64.
12. “Growth of Silver Nanostructure for Plasmonics in Solar Cell” by Atul Bisht, O. S. Panwar, Ajay Kesarwani, Sreekumar Chockalingam, Poster paper in TAPSUN National Conference on `Advances in Futuristic Solar Energy Technologies’, held at NPL, New Delhi from 4-5 Dec.2012.p. 65.
13 “Formation and Properties of Amorphous Carbon Films Embedded with Nanoparticles Deposited by Filtered Anodic Jet Carbon Arc Technique” by O. S. Panwar, R. K. Tripathi, C. Sreekumar, A. K. Srivastava and Sushil Kumar, in the 22nd Annual General Meeting of Materials Research Society of India (MRSI), held at Bhopal from Feb.14-16, 2011.
14. “Mechanical Properties of Hydrogen and Nitrogen Incorporated Tetrahedral Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc Technique“ authored by O. S. Panwar, C. Sreekumar, R. K. Tripathi and Sushil Kumar, in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal from Feb.14-16, 2011.
15. “Correlation of Plasma Parameters with the Properties of DLC Films” By Sushil Kumar, Ishpal, Neeraj
Dwivedi, C.M.S. Rauthan and O. S. Panwar, Oral presentation in National Conference on Recent
Advances in Surface Engineering (RASE09)held at N.A.L., Bangalore from Feb. 26-2, 2009(O: 46)
16. “Impedance Measurements of Hydrocarbon Plasma for the Growth of the Diamond Like Carbon Films” by Ishpal, Sushil Kumar, Neeraj Dwivedi, C.M.S. Rauthan and O. S. Panwar, Extended Abstract in “National Conference on Photonics and Materials Science(NCPMS) held at Deptt. of Applied Physics, Guru Jambheshwar University of Science and Technology, Hisar, Haryana (India) from Oct. 24-25, 2008.
17. “Custom Designed and Indigenously Developed Filtered Cathodic vacuum Arc System for the Deposition of
Films at NPL” by O. S. Panwar, P. N. Dixit and R. Bhattacharyya, in 18th Annual General Meeting of
Materials Research Society of India (MRSI), held at National Physical Laboratory, New Delhi from
Feb.,12-14, 2007, p.232-233.
18. “Electron Field-Emission from Tetrahedral Amorphous Carbon Films Grown Using an S Bend Filtered Cathodic Vacuum Arc Process” by O. S. Panwar, Mohd. Alim Khan, B. S. Satyanarayana, P.N. Dixit and M.Y. Khan, MITDISC-2005-National Conference on Devices, Intelligent Systems and Communications’, held at Manipal Institute of Technology, Manipal from Sept. 21st to 7th Oct. 2005, p.15-20.
19. "Surface Analysis of Diamond -Like Carbon Films Grown by Saddle Field Fast Atom Beam Source” by D. Sarangi, O. S. Panwar, Sushil Kumar and R. Bhattacharyya in `20 th National Conference of the Electron Microscope Society of India', held at IACS, Calcutta from Dec.,5-7, 1996.
20. "Effect of Hydrogen Dilution on Boron Doped Hydrogenated Amorphous Silicon Carbide Films Grown in a Multizone Plasma CVD System" by B.S. Satyanarayana, P.N. Dixit, O. S. Panwar, Tanay Seth, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in `2nd Annual General Meeting of Material Research Society of India' held at NPL, New Delhi on Feb. 9-10, 1991.
21. "Effect of Power and Pressure on the Properties of High Rate Deposited Hydrogenated Amorphous Silicon Films" by Tanay Seth, P.N. Dixit, B.S. Satyanarayana, O. S. Panwar, Ajay Tyagi, R. Bhattacharyya and V.V. Shah in `2nd Annual General Meeting of Material Research Society of India' held at NPL, New Delhi on Feb. 9-10, 1991.
22. "Properties of Boron Doped Hydrogenated Amorphous Silicon Films Prepared By Glow Discharge
Decomposition In Dilute Silane" by O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, R. Bhattacharyya and
V.V. Shah in 6th Nat. Seminar on `Semi conductor Devices', held at Calcutta from Dec., 10-12, 1986.
23."Mass Spectroscopic Analysis of Silane Plasma During Growth of a-Si:H Films in Cascaded Glow Discharge
Reactors" by P.N. Dixit, O. S. Panwar, B. S. Satyanarayana , R. Bhattacharyya and V.V. Shah in 6th Nat.
Seminar on `Semiconductor Devices', held at Calcutta from Dec. 10-12, 1986.
24. "Density of Gap States in a-Si:H Films Grown in Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R. Bhattacharayya and V.V. Shah in V Nat. Seminar on `Physics of Semiconductors and Devices held at Dept. of Physics and Electronics Engineering, B. H. U. Varanasi from Dec.5-7, 1985.
25. "Space Charge Limited Conduction in Pd/a-Si: H Schottky Diodes" by C. Anandan, P.N. Dixit, O. S. Panwar, R.Bhattacharyya and V.V. Shah, in Symposium on `Photovoltaic Materials and Devices', 1984 held at N.P.L., New Delhi.
26 "Growth of Highly Resistive a-Si: H Films Deposited in Cascaded Reactors" by P.N. Dixit, R. Bhattacharyya,
O. S. Panwar and V.V. Shah, Proc. Symposium Nuclear Physics and Solid State Physics, 1983, held at Mysore.
27. "R.F. Magnetron Sputtered a-Si:H Films for Solar Cells" by Satyendra Kumar, O. S. Panwar, D.K. Pandya and K.L.Chopra, Proc. National Energy Convention 1983, held at Vadroda, Baroda.
28. "Photoconductivity of Pure and Doped Glasses of As-Ge-Te" by O. S. Panwar, T. Krishan, K.K. Srivastava
and K.N. Lakshminarayan, Proc. Ind. Science Congress, 1982, held at Tirupati
29. "Annealing Effect on Pure and Doped Glasses of As-Ge-Te" by O. S. Panwar, K.K. Srivastava and K. N.
Lakshminarayan, Proc. Symposium Nuclear Physics &Solid State Physics, 23 C (1980) 860.
30. "Field Dependent Conductivity on As-Ge-Te Glassy Films" by K.N. Lakshminaryan, O. S. Panwar and K.K. Srivastava, Proc. Symposium Nuclear Physics and Solid State Physics, 23 C (1980) 203-205.
31. "Pure and Doped Glasses of As-Ge-Te" by O. S. Panwar , K.K.Srivastava and K.N. Lakshminarayan, Proc. Symposium on "Non- Crystalline Solids" edited by S.C. Agarwal held at I.I.T., Kanpur from Feb. 4-5, 1980, p. 77-79.
32. "Simple Resistance Technique to Measure the Activation Energy and Mobility of Electromigration in Amorphous Semiconductors" by O.S. Panwar, D.R. Goyal, A. Kumar, K.K. Srivastava and K.N. Lakshminarayan, Proc. Symposium Nuclear Physics and Solid State Physics, 20C (1977) 683-685.
33. "Behavioral Characteristics of Glassy As-Ge-Te Alloy Systems" by A. Kumar, O. S. Panwar, D.R. Goyal, K.N. Lakshminarayan and K.K. Srivastava, Proc. Symposium Nuclear Physics and Solid state Physics, 20C (1977) 187-189.
F. Research Report submitted in N.P.L.
1. "Evaluation of the Ratio of (C-sp3 / C-sp2) in hydrogenated Amorphous Carbon (a-C: H) from Analysis of
Dielectric Constants" by B.S. Verma, A. Basu, O. S. Panwar, P.N. Dixit, D. Sarangi, M. Kar and R. Bhattacharyya, Report No. NPL-94-C1.5-0005.
2. "Plasma Spectroscopic Analysis of Glow Discharge Decomposition of Silane in Cascaded Reactors" by P.N.
Dixit, O. S. Panwar, B.S. Satyanarayana, R. Bhattacharyya and V.V. Shah, Report No. NPL-91-D3-0013.
3. "Self Aligned Polysilicon Gate TFTs for Flat Panel Displays" by O. S. Panwar, N. S. J. Mitchell, S.H. Raza, J.H. Montgomery, H.S. Gamble, B.M. Armstrong and R.A. Moore, Report No. NPL-89-3-0021.
4. "Crystallization of APCVD Amorphous Silicon Films at Low- Temperatures to Produce Large Grains" by O. S. Panwar, R.A. Moore, S.H. Raza, H.S.Gamble and B.M. Armstrong, Report No. NPL-89-D3-0018.
5. "Low-Temperature Crystallization of Amorphous Silicon Films for the Fabrication of Thin Film Transistors" by O. S. Panwar, R.A. Moore, N.S.J. Mitchell, H.S. Gamble and B.M. Armstrong, Report No. NPL-89-D3-0017.
6. "Electrical Properties of Boron Doped Hydrogenated Amorphous Silicon Films by Glow Discharge Decomposition of Diluted Silane" by O. S. Panwar, P.N. Dixit, Ajay Tyagi, Tanay Seth, B.S. Satyanarayana, R. Bhattacharyya and V.V. Shah, Report No. NPL-88-D3-0036.
7. "Density of Gap States in a-Si: H Films Grown in Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R. Bhattacharyya and V.V. Shah, Report No. NPL-88-D3-0035.
8. "Hydrogenated Amorphous Silicon Films Prepared in Cascaded Glow Discharge Reactors" by O. S. Panwar, P.N. Dixit, R.Bhattaryya and V.V. Shah, Report No. NPL-86-D3-0025.
9. "Light Induced Conductivity Changes in Hydrogenated Amorphous Silicon Films Prepared in Cascaded Glow Discharge Reactors” by O. S. Panwar, P. N. Dixit, R. Bhattacharyya and V.V. Shah, Report No. NPL-86-D3-0051.
10. "Comparative Study of Growth Morphology in a-Si:H Films Prepared in Cascaded Glow Discharge Reactors" by P.N. Dixit, R. Bhattacharyya, O. S. Panwar, C.Anandan and V.V.Shah, Report No.NPL-86-D3-0050
11. "Design and Fabrication of Glow Discharge System for Amorphous Silicon Films by P.N. Dixit, R. Bhattacharyya, O. S. Panwar and V.V. Shah, Report No. NPL-86-D3-0048.
G. Paper in Hindi
1. “Custom Designed and Indigenously Developed FCVA System for deposition Tetrahedral Amorphous
Carbon (ta-C) Films at NPL” by O. S. Panwar, Mohd. Alim Khan, P. N. Dixit, R. Bhattacharyya and B.S.
Satyanarayana, NPL Samiksha 26( 2005) 3.
2. “Diamond and Diamond Like Carbon “ by Rajnish Sharma, Sushil Kumar, P.N Dixit, Sudheer Kumar,
O. S. Panwar and R. Bhattacharyya, NPL Samiksha 22(4) (1999)1-3.
H. Invited talks/papers/lectures
1. “Photothermal Deflection Spectroscopy (PDS),A Tool to Study Optical Absorption in Silicon and Polymer Multilayered Thin Films for Solar Cell Applications” by Sreekumar Chockalingam and O. S. Panwar, Invited Talk (IL-40) in “ 3rd Int. Multicomponent Polymer Conference (IMPC)”, held at Institute of Macromolecular Science and Engineering (IMSE), Kottayam, Kerala (India) from March 23-25, 2012, p. 37.
2. “Tetrahedral Amorphous Carbon and Amorphous Carbon Films with Embedded Nanoparticles Deposited by Filtered Cathodic Vacuum Arc Technique” by O. S. Panwar, MRSI Medal Lecture in the 22nd Annual General Meeting of Materials Research Society of India (MRSI) held at Bhopal (M.P.) from Feb.14-16, 2011.
3. “Novel Filtered Cathodic Vacuum Arc Technique for the Deposition of Tetrahedral Amorphous Carbon Films” by O. S. Panwar, Invited Inaugural lecture as Chief Guest in the Annual function of Department of Chemistry, Daulat Ram College, University of Delhi, Delhi, 7th Dec. 2009.
4. "Different Approaches to Realize Stress Relieved Films of Diamond- Like Carbon" by Sushil Kumar, D. Sarangi, P.N. Dixit, O. S. Panwar, C. Anandan and R. Bhattacharyya, Invited talk in National Conference on `Science and Technology of Surfaces and Interfaces' held at I. I. T. Kharagpur from Dec.,16-18, 1996.
5. "Polysilicon TFTs Manufactured From Material Recrystallised at Low-Temperature" by B.M. Armstrong, H.S. Gamble, N.S.J. Mitchell, O. S. Panwar and R.A. Moore, Invited Oral paper in Workshop on `Polysilicon Thin-Film Transistors and Related Material Aspects for Large Area Microelectonics' , Cambridge (U.K.) 1989.
6. "Growth of Hydrogenated Amorphous Silicon Films In Cascaded Glow Discharge Reactors Systems - A Review" by P.N. Dixit, O. S. Panwar, R. Bhattacharyya and V.V. Shah, Invited talk in V Nat. Seminar on `Physics of Semiconductors and Devices', held at Dept. of Physics and Electronics Engineering, B.H.U. Varanasi from Dec.5-7, 1985.
I. Best Poster Paper Award:
1. The poster paper entitled “Field Emission From Diamond Like Carbon Films Grown By RF PECVD Technique by Using Various Hydrocarbons” by O. S. Panwar, Sushil Kumar, S. S. Rajput, Rajnish Sharma & R.Bhattacharyya, presented in 10th Int. Workshop on “Physics of Semiconductor Devices” held at I.I.T. Delhi from Dec. 14 – 18, 1999 has been adjudged the best poster paper. IEEE (India) and MTT chapter has also given a cash prize of Rs 1000/-.
2. The poster paper entitled "Photothermal Deflection Spectroscopy and Space Charge Limited Conduction Studies in Diamond Like Carbon Films Grown Using Saddle Field Fast Atom Beam Source’’ by D. Sarangi, O. S. Panwar and R. Bhattacharyya, presented in 9th Int. Workshop on `Physics of Semiconductor Devices,' held at Jamia Millia Islamia, Jamia Nagar, New Delhi from Dec. 16-20, 1997 has been adjudged the best poster paper on 17th December 1997.
11. Contribution of National/International issues; if any.
Major Significant Scientific Achievements of national and international level are listed in the following:
(i) I have custom designed and indigenously developed an S bend filtered cathodic vacuum arc (FCVA) system for the first time in the country (CSIR News, Vol. 56 No.9, 15th May 2006). The system has been used to deposit pure and doped tetrahedral amorphous carbon (ta-C) films. The system has been modified and two novel “cathodic jet carbon arc” (CJCA) and “anodic jet carbon arc” (AJCA) techniques have been conceived and got fabricated and integrated into the existing system. Undoped and doped amorphous carbon films with embedded nanoparticles are being grown for enhanced tribological and field emission applications. ta-C as a novel material and Cathodic arc as a process are of great technological significance in many areas which include protective and bio compatible coatings on heart valves, protective coatings on compact discs & very fine tools.
(ii) FCVA system is being used in the synthesis of few layer graphene which is a wonder material. We have succeeded in transferring graphene on any other substrate.
(iii) We have also synthesized graphene oxide by MPECVD system using Ar and C2H2 gas mixture.
(iv)We have developed the Process know how of stress relieved DLC coatings on Ge substrates of 250 mm size with IR transmission > 87% in 8-12 μm range which meets various MIL specification together with designing and fabricating Plasma CVD system and the same has been transferred to IRDE Dehradun (DRDO, NAG).
(v)A new technique known as saddle field fast atom beam source has been set up in a conventional 30 cm dia. vacuum system for the deposition of diamond like carbon (DLC) films. We have been successful in depositing DLC films for the first time using CH4 gas using this source. Saddle field FAB grown DLC films have extremely low stress (0.10 – 0.25 GPa) and high hardness (9-22 GPa) at 50 gm load and it has been used to coat stainless rajor blades for enhancing their shaving efficiency. Further, a novel method to filter the neutral and ionic radicals coming out of a FAB source has been invented by use of a deflector arrangement placed in front of a saddle field source where DLC films can be simultaneously deposited using neutral and ionic radicals.
(vi) Metal and Si incorporated DLC films have been found to show reduced stresses which are useful for tribological applications.
(vii) We have developed and demonstrated high efficiency a-Si: H based solar cells (11.3%, AM1.5, 100 mW/cm2 on 1 cm2 area) and fully integrated solar panels for the operation of pocket transistors. These were tested at IACS kolkata. and were comparable to the best results reported in USA and Japan working in this area at that time. The double tandem solar cells were made using same material with different thickness.
(viii) We have developed an improved process for the production of high resistivity a-Si: H films in cascaded glow discharge reactor which has been indigenously made in the laboratory (Indian patent no. 165530). The films prepared in the second reactor of the cascade when both the reactors are energized simultaneously, exhibit very high resistivity (1012-1013ohm cm), higher optical band gap (2.0 -2.1 eV), less density of states and less prone to S-W effect compared to the films prepared in the first reactor.
(ix) A simple and novel Process for making large grains (up to 6400 Ao) has been explored. This is to deposit the film initially in amorphous form and then crystallize at low-temperatures instead of high temperatures. The grain size in this process is influenced by the deposition and annealing temperatures, the deposition rates and film thickness. TFTs have been fabricated in these low-temperature crystallized LPCVD and APCVD silicon films using self-aligned gate technology. Carrier mobility as high as 27-28 cm2/V sec was obtained in LPCVD silicon films.
(x) a-Si: H films have been grown at high growth rate (upto 18 Ao/sec) with acceptable opto-electronic properties. These high rate deposited a-Si: H films have been used in making various devices where we use 4-6 μm thick a-Si: H films in developing pixel diodes for X-ray detectors (IIT, Kanpur), optical addressed spatial light modulators (OASLM) (for LCD group in NPL) etc.
(xi)Amorphous, micro/nano silicon films are being grown at high rate using microwave/VHF PECVD system. The work of making single junction and tandem solar cells is to be started on larger areas with financial assistance from MNRE, Govt. of India under JNNSM solar mission.
(xii)Preparation, characterization and switching properties of pure and doped chalcogenide glasses of As-Ge-Te and Ge-Se-Te and photo contraction effect in pure chalcogen thin films.